I
TSM
I
FSM
[A]
t [s]
Fig. 1 Surge overload current
I
T(F)SM
: crest value, t: duration
t [ms]
I
2
t
[A
2
s]
10
6
10
4
1 2 4
6
8 10
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Max. forward current
at case temperature
T
C
[°C]
I
TAVM
[A]
Fig. 4 Power dissipation versus onstate current and•
ambient temperature (per thyristor/diode)
T
A
[°C]
I
TAVM
, I
FAVM
[A]
P
T
T
A
[°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
I
dAVM
[A]
P
T
Fig. 5 Gate trigger characteristics
Fig. 7 Gate trigger delay time
V
G
[V]
t
gd
[µs]
I
G
[A]
6
5
4
3
1
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
2
3: I
GT
, T
VJ
= -40°C
2: I
GT
, T
VJ
= 25°C
1: I
GT
,
T
VJ
= 130°C
I
GD
,
T
VJ
= 130°C
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
limit
typ.
10 100 1000 10000
0.1
1
10
100
0.01 0.1 1 10
T
VJ
= 25°C
0.001 0.01 0.1 1
0
2000
4000
6000
8000
50 Hz
80% V
RRM
T
VJ
= 45 C
T
VJ
= 130 C
V
R
= 0V
10
5
3
5 7
0 2 5 5 0 7 5 100 125 150
0
50
100
150
200
250
300
350
400
180 sin
120
60
30
DC
0 25 50 75 100 125 150
0 100 200 300
0
100
200
300
400
500
0.8
1
0.2
0.3
0.4
0.6
R
thK A
K/W
0.1
180 sin
120
60
30
DC
0 25 50 75 100 125 1500 200 400 600
0
500
1000
1500
2000
0.2
0.15
0.1
0.08
0.05
0.03
0.3
3xMCC224
Circuit
B6
R
thK A
K/W
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20170116hData according to IEC 60747and per semiconductor unless otherwise specified
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