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SBL1630CTHE3/45

P1-P3P4-P5
SBL(F,B)1630CT, SBL(F,B)1640CT
www.vishay.com
Vishay General Semiconductor
Revision: 27-Jun-12
1
Document Number: 88727
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
8 A x 2
V
RRM
30 V, 40 V
I
FSM
250 A
V
F
0.55 V
T
J
max. 125 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL16xxCT
ITO-220AB
SBLB16xxCT
PIN 1
K
PIN 2
HEATSINK
1
2
3
1
2
K
SBLF16xxCT
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL1630CT SBL1640CT UNIT
Maximum repetitive peak reverse voltage V
RRM
30 40
VWorking peak reverse voltage V
RWM
21 28
Maximum DC blocking voltage V
DC
30 40
Maximum average forward rectified current
at T
C
= 95 °C
total device
I
F(AV)
16
8.0
A
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
250
Operating junction and storage temperature range T
J
, T
STG
- 40 to + 125 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
SBL(F,B)1630CT, SBL(F,B)1640CT
www.vishay.com
Vishay General Semiconductor
Revision: 27-Jun-12
2
Document Number: 88727
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT
Maximum instantaneous forward voltage per diode V
F
(1)
8.0 A 0.55 V
Maximum instantaneous reverse current at DC blocking
voltage per diode
(1)
I
R
(2)
Rated V
R
T
C
= 25 °C 0.5
mA
T
C
= 100 °C 50
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL SBLF SBLB UNIT
Typical thermal resistance from junction to case
per diode
R
JC
2.0 4.0 2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB SBL1630CT-E3/45 1.85 45 50/tube Tube
ITO-220AB SBLF1630CT-E3/45 1.99 45 50/tube Tube
TO-263AB SBLB1630CT-E3/45 1.35 45 50/tube Tube
TO-263AB SBLB1630CT-E3/81 1.35 81 800/reel Tape and reel
TO-220AB SBL1630CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB SBLF1630CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB SBLB1630CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB SBLB1630CTHE3/81
(1)
1.33 81 800/reel Tape and reel
SBL(F,B)1630CT, SBL(F,B)1640CT
www.vishay.com
Vishay General Semiconductor
Revision: 27-Jun-12
3
Document Number: 88727
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
4
8
12
20
0
50
100
150
16
Resistive or Inductive Load
Average Forward Cu
rrent (A)
Case Temperature (°C)
0
50
150
100
250
200
300
1
100
10
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
100
10
1
0.1
0.01
0 0.20.1 0.6 1.1 1.20.40.3 0.7 0.8 0.90.5 1.0
T
J
= 125 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
1
10
100
0.01
0.001
0.1
200 10040 60 80
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
1000
10 000
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
10
100
0.1
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

SBL1630CTHE3/45

Mfr. #:
Buy SBL1630CTHE3/45
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 30 Volt 16 Amp Dual Common-Cathode
Lifecycle:
New from this manufacturer.
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