NXP Semiconductors
PMEG6030ETP
High-temperature 60 V, 3 A Schottky barrier rectifier
PMEG6030ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 15 October 2012 7 / 14
006aad144
V
R
(V)
0 604020
1.0
1.5
0.5
2.0
2.5
P
R(AV)
(W)
0
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
006aad157
V
R
(V)
0 604020
1.0
1.5
0.5
2.0
2.5
P
R(AV)
(W)
0
(1)
(2)
(3)
(4)
T
j
= 125 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 9. Average reverse power dissipation as a
function of reverse voltage; typical values
006aad158
V
R
(V)
0 604020
0.10
0.15
0.05
0.20
0.25
P
R(AV)
(W)
0
(1)
(2)
(3)
(4)
T
j
= 85 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 10. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 20015050 100
006aad145
1.5
3.0
4.5
I
F(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
T
j
= 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
