BCR 141S E6727

P1-P3 P4-P6 P7-P9 P10-P12

2007-08-02

1

BCR141...

NPN Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

• Built in bias resistor (R

1

=22kΩ, R

2

=22kΩ)

• BCR141S / U: Two internally isolated

transistors with good matching

in one multichip package

• BCR141S / U: For orientation in reel see

package information below

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

BCR141F/W BCR141S/U

EHA07184

3

21

C

EB

R

1

R

2

EHA07174

6 54

321

C1 B2 E2

C2B1E1

1

R

R

2

R

1

R

2

TR1

TR2

Type Marking Pin Configuration Package

BCR141F

BCR141S

BCR141U

BCR141W

WDs

WDs

WDs

WDs

1=B

1=E1

1=E1

1=B

2=E

2=B1

2=B1

2=E

3=C

3=C2

3=C2

3=C

-

4=E2

4=E2

-

-

5=B2

5=B2

-

-

6=C1

6=C1

-

TSFP-3

SOT363

SC74

SOT323

1

Pb-containing package may be available upon special request

2007-08-02

2

BCR141...

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage V

CEO

50 V

Collector-base voltage V

CBO

50

Input forward voltage V

i(fwd)

60

Input reverse voltage V

i(rev)

10

Collector current I

C

100 mA

Total power dissipation-

BCR141F, T

S

≤ 128°C

BCR141S, T

S

≤ 115°C

BCR141U, T

S

≤ 118°C

BCR141W, T

S

≤ 124°C

P

tot

250

250

250

250

mW

Junction temperature T

j

150 °C

Storage temperature T

stg

-65 ... 150

Thermal Resistance

Parameter

Symbol Value Unit

Junction - soldering point

1)

BCR141F

BCR141S

BCR141U

BCR141W

R

thJS

≤ 90

≤ 140

≤ 105

≤ 133

K/W

1

For calculation of R

thJA

please refer to Application Note Thermal Resistance

2007-08-02

3

BCR141...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 100 µA, I

B

= 0

V

(BR)CEO

50 - -

V

Collector-base breakdown voltage

I

C

= 10 µA, I

E

= 0

V

(BR)CBO

50 - -

Collector-base cutoff current

V

CB

= 40 V, I

E

= 0

I

CBO

- - 100 nA

Emitter-base cutoff current

V

EB

= 10 V, I

C

= 0

I

EBO

- - 350 µA

DC current gain

1)

I

C

= 5 mA, V

CE

= 5 V

h

FE

50 - - -

Collector-emitter saturation voltage

1)

I

C

= 10 mA, I

B

= 0.5 mA

V

CEsat

- - 0.3 V

Input off voltage

I

C

= 100 µA, V

CE

= 5 V

V

i(off)

0.8 - 1.5

Input on voltage

I

C

= 2 mA, V

CE

= 0.3 V

V

i(on)

1 - 2.5

Input resistor R

1

15 22 29 kΩ

Resistor ratio R

1

/R

2

0.9 1 1.1 -

AC Characteristics

Transition frequency

I

C

= 10 mA, V

CE

= 5 V, f = 100 MHz

f

T

- 130 - MHz

Collector-base capacitance

V

CB

= 10 V, f = 1 MHz

C

cb

- 3 - pF

1

Pulse test: t < 300µs; D < 2%

P1-P3 P4-P6 P7-P9 P10-P12

BCR 141S E6727

Mfr. #:

Buy BCR 141S E6727

Manufacturer:

Infineon Technologies

Description:

TRANS 2NPN PREBIAS 0.25W SOT363

Lifecycle:

New from this manufacturer.

Delivery:

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