IPD135N08N3GATMA1

P1-P3 P4-P6 P7-P9

IPD135N08N3 G

OptiMOS

(TM)

3 Power-Transistor

Features

• Ideal for high frequency switching

• Optimized technology for DC/DC converters

• Excellent gate charge x R

DS(on)

product (FOM)

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC

1)

for target applications

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25 °C

2)

45 A

T

C

=100 °C

39

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

180

Avalanche energy, single pulse

3)

E

AS

I

D

=45 A, R

GS

=25 W

50 mJ

Gate source voltage

V

GS

±20 V

Power dissipation

P

tot

T

C

=25 °C

79 W

Operating and storage temperature

T

j

, T

stg

-55 ... 175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

3)

See figure 13 for more detailed information

Value

1)

J-STD20 and JESD22

2)

See figure 3 for more detailed information

V

DS

80

V

R

DS(on),max

13.5

mW

I

D

45

A

Product Summary

Type

IPD135N08N3 G

Package

PG-TO-252-3

Marking

135N08N

Rev. 2.2 page 1 2014-05-19

IPD135N08N3 G

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

- - 1.9 K/W

Thermal resistance,

R

thJA

minimal footprint - - 62

junction - ambient

6 cm

2

cooling area

4)

- - 40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=1 mA

80 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=33 µA

2 2.8 3.5

Zero gate voltage drain current

I

DSS

V

DS

=80 V, V

GS

=0 V,

T

j

=25 °C

- 0.1 1 µA

V

DS

=80 V, V

GS

=0 V,

T

j

=125 °C

- 10 100

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- 1 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10 V, I

D

=45 A

- 11.4 13.5

mW

V

GS

=6 V, I

D

=22.5 A

- 16.0 26

Gate resistance

R

G

- 2 -

W

Transconductance

g

fs

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=45 A

24 48 - S

4)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Values

Rev. 2.2 page 2 2014-05-19

IPD135N08N3 G

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 1300 1730 pF

Output capacitance

C

oss

- 353 469

Reverse transfer capacitance

C

rss

- 15 -

Turn-on delay time

t

d(on)

- 12 - ns

Rise time

t

r

- 35 -

Turn-off delay time

t

d(off)

- 18 -

Fall time

t

f

- 5 -

Gate Charge Characteristics

5)

Gate to source charge

Q

gs

- 7 - nC

Gate to drain charge

Q

gd

- 4 -

Switching charge

Q

sw

- 8 -

Gate charge total

Q

g

- 19 25

Gate plateau voltage

V

plateau

- 5.5 - V

Output charge

Q

oss

V

DD

=40 V, V

GS

=0 V

- 25 34 nC

Reverse Diode

Diode continous forward current

I

S

- - 45 A

Diode pulse current

I

S,pulse

- - 180

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=45 A,

T

j

=25 °C

- 1.0 1.2 V

Reverse recovery time

t

rr

- 50 - ns

Reverse recovery charge

Q

rr

- 74 - nC

5)

See figure 16 for gate charge parameter definition

V

R

=40 V, I

F

=I

S

,

di

F

/dt=100 A/µs

T

C

=25 °C

Values

V

GS

=0 V, V

DS

=40 V,

f=1 MHz

V

DD

=40 V, V

GS

=10 V,

I

D

=45 A, R

G,ext

=1.6 W

V

DD

=40 V, I

D

=45 A,

V

GS

=0 to 10 V

Rev. 2.2 page 3 2014-05-19

P1-P3 P4-P6 P7-P9

IPD135N08N3GATMA1

Mfr. #:

Buy IPD135N08N3GATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET MV POWER MOS

Lifecycle:

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