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NTUD3170NZT5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2008
May, 2017 − Rev. 1
1 Publication Order Number:
NTUD3170NZ/D
NTUD3170NZ
Small Signal MOSFET
20 V, 220 mA, Dual N−Channel, 1.0 mm x
1.0 mm SOT−963 Package
Features
• Dual N−Channel MOSFET
• Offers a Low R
DS(ON)
Solution in the Ultra Small 1.0 x 1.0 mm
Package
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics
• This is a Pb−Free Device
Applications
• General Purpose Interfacing Switch
• Optimized for Power Management in Ultra Portable Equipment
• Analog Switch
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±8 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
220
mA
T
A
= 85°C 160
t v 5 s
T
A
= 25°C 280
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
125
mW
t v 5 s
200
Pulsed Drain Current
t
p
= 10 ms
I
DM
800 mA
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
200 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
www.onsemi.com
Top View
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3D
2
PINOUT: SOT−963
D1
S1
G1
N−Channel
MOSFET
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX I
D
Max
20 V
1.5 W @ 4.5 V
2.0 W @ 2.5 V
0.22 A
3.0 W @ 1.8 V
4.5 W @ 1.5 V
SOT−963
CASE 527AD
MARKING
DIAGRAM
3 = Specific Device Code
M = Date Code
3 M
1
D2
S2
G2
NTUD3170NZ
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
1000
°C/W
Junction−to−Ambient – t = 5 s (Note 3) 600
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
20 V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 5 V
T
J
= 25°C 50 nA
T
J
= 85°C 200
nA
V
GS
= 0 V, V
DS
= 16 V T
J
= 25°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±5.0 V ±100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.4 1.0 V
Drain−to−Source On Resistance
R
DS(ON)
V
GS
= 4.5 V, I
D
= 100 mA 0.75 1.5
W
V
GS
= 2.5 V, I
D
= 50 mA 1.0 2.0
V
GS
= 1.8 V, I
D
= 20 mA 1.4 3.0
V
GS
= 1.5 V, I
D
= 10 mA 1.8 4.5
V
GS
= 1.2 V, I
D
= 1.0 mA 2.8
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 125 mA 0.48 S
Source−Drain Diode Voltage V
SD
V
GS
= 0 V, I
S
= 10 mA 0.6 1.0 V
CAPACITANCES
Input Capacitance
C
ISS
f = 1.0 MHz, V
GS
= 0 V
V
DS
= 15 V
12.5
pF
Output Capacitance C
OSS
3.6
Reverse Transfer Capacitance C
RSS
2.6
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DD
= 10 V, I
D
= 200 mA,
R
G
= 2.0 W
16.5
ns
Rise Time t
r
25.5
Turn−Off Delay Time t
d(OFF)
142
Fall Time t
f
80
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
†
NTUD3170NZT5G SOT−963
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTUD3170NZ
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
0.1
0.2
0.3
0.4
3210
0
0.1
0.2
0.3
0.4
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
543210
0
1
2
3
4
0.350.30 0.400.250.200.150.100.05
0
0.25
0.50
0.75
1.00
1.25
1.50
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.50
0.75
1.00
1.25
1.50
1.75
201612840
10
100
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RE-
SISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RE-
SISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RE-
SISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 2 thru 5 V
T
J
= 25°C
1.8 V
1.6 V
1.4 V
1.2 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
V
DS
≥ 5 V
I
D
= 220 mA
T
J
= 25°C
T
J
= 25°C
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 4.5 V
I
D
= 100 mA
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
150
P1-P3P4-P5

NTUD3170NZT5G

Mfr. #:
Buy NTUD3170NZT5G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V Trench N-Channel
Lifecycle:
New from this manufacturer.
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