TLVH42N2Q2
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 14-Oct-14
1
Document Number: 83461
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Backlighting LED, Ø 3 mm Tinted Non-Diffused Package
DESCRIPTION
The TLV.420. series was developed for backlighting. Due to
its special shape the spatial distribution of the radiation is
qualified for backlighting.
To optimize the brightness of backlighting a custom-built
reflector (with scattering) is required. Uniform illumination
can be enhanced by covering the front of the reflector with
diffusor material.
This is a flexible solution for backlighting different areas.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 3 mm backlighting
• Product series: standard
• Angle of half intensity: ± 85°
FEATURES
• High light output
• Wide viewing angle
• Categorized for luminous flux
• Tinted clear package
• Low power dissipation
• Low self heating
• Rugged design
• High reliability
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Backlighting of display panels, LCD displays, symbols on
switches, keyboards, graphic boards, and measuring
scales
• Illumination of large areas e.g. dot matrix displays
Note
(1)
Driving the LED in reverse direction is suitable for a short term application
19231
PARTS TABLE
PART COLOR
LUMINOUS FLUX
(mlm)
at I
F
(mA)
WAVELENGTH
(nm)
at I
F
(mA)
FORWARD VOLTAGE
(V)
at I
F
(mA)
TECHNOLOGY
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
TLVH42N2Q2 Red 35.5 - 112 15 612 - 625 10 - 2.4 3.0 20 GaAsP on GaP
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
TLVH42N2Q2
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage
(1)
V
R
6V
DC forward current T
amb
≤ 60 °C I
F
30 mA
Surge forward current t
p
≤ 10 μs I
FSM
1A
Power dissipation P
V
90 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-55 to +100 °C
Soldering temperature t ≤ 5 s, 2 mm from body T
sd
260 °C
Thermal resistance junction/ambient R
thJA
400 K/W