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AOTF2610L

P1-P3P4-P6P7-P7
AOT2610L/AOTF2610L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 5 10 15 20 25
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
2000
2400
0 10 20 30 40 50 60
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
C
oss
C
rss
V
DS
=30V
I
D
=20A
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe Operating
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
40
for AOT2610L (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2610L (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT2610L (Note F)
R
θJC
=2.0°C/W
Rev.1.0: March 2013 www.aosmd.com Page 4 of 7
AOT2610L/AOTF2610L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.6 2.15
17
5
2
10
0
18
40
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area for AOTF2610L (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOTF2610L (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
R
θJC
=4.8°C/W
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2610L (Note F)
Rev.1.0: March 2013 www.aosmd.com Page 5 of 7
AOT2610L/AOTF2610L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
0 25 50 75 100 125 150 175
Power Dissipation (W)
T
CASE
(°
°°
°C)
Figure 13: Power De-rating (Note F)
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
Current rating I
D
(A)
T
CASE
(°
°°
°C)
Figure 14: Current De
-
rating (Note F)
1
10
100
1000
0.001 0.1 10 1000
Power (W)
Pulse Width (s)
T
A
=25°C
1
10
100
1000
1 10 100 1000
I
AR
(A) Peak Avalanche Current
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
40
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 14: Current De
-
rating (Note F)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note H)
R
θJA
=60°C/W
Rev.1.0: March 2013 www.aosmd.com Page 6 of 7
P1-P3P4-P6P7-P7

AOTF2610L

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Buy AOTF2610L
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Description:
MOSFET N-CH 60V 35A TO220F
Lifecycle:
New from this manufacturer.
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