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1N5821

P1-P3P4-P5
1/5
1N582x
July 2003 - Ed: 3A
LOW DROP POWER SCHOTTKY RECTIFIER
®
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency inverters, free wheeling, polarity
protection and small battery chargers.
DESCRIPTION
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol Parameter
Value
Unit
1N5820 1N5821 1N5822
V
RRM
Repetitive peak reverse voltage
20 30 40 V
I
F(RMS)
RMS forward current
10 A
I
F(AV)
Average forward current T
L
= 100°C δ = 0.5
3A
T
L
= 110°C δ = 0.5
33 A
I
FSM
Surge non repetitive forward
current
tp=10ms
Sinusoidal
80 A
P
ARM
Repetitive peak avalanche
power
tp = 1µs Tj = 25°C
1700 W
T
stg
Storage temperature range
- 65 to + 150 °C
Tj
Maximum operating junction temperature *
150 °C
dV/dt
Critical rate of rise of reverse voltage
10000 V/µs
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3A
V
RRM
40 V
T
j
150°C
V
F
(max) 0.475 V
MAIN PRODUCTS CHARACTERISTICS
DO-201AD
*:
dPtot
dTj Rth j a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
1N582x
2/5
Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit
I
R
*
Reverse leakage
current
Tj=25°CV
R
=V
RRM
222mA
Tj = 100°C
20 20 20 mA
V
F
*
Forward voltage drop Tj = 25°CI
F
=3A
0.475 0.5 0.525 V
Tj=25°CI
F
= 9.4 A
0.85 0.9 0.95 V
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equations :
P=0.33xI
F(AV)
+ 0.035 I
F
2
(RMS )
for 1N5820 / 1N5821
P=0.33xI
F(AV)
+ 0.060 I
F
2
(RMS )
for 1N5822
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient
Lead length = 10 mm 80 °C/W
R
th (j-l)
Junction to lead
Lead length = 10 mm 25 °C/W
THERMAL RESISTANCES
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PF(av)(W)
IF(av) (A)
T
δ
=tp/T
tp
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
Fig. 1: Average forward power dissipation versus
average forward current (1N5820/1N5821).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PF(av)(W)
IF(av) (A)
T
δ
=tp/T
tp
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
Fig. 2: Average forward power dissipation versus
average forward current (1N5822).
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
1N582x
3/5
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
Tamb(°C)
T
δ
=tp/T
tp
Rth(j-a)=80°C/W
Rth(j-a)=Rth(j-l)=25°C/W
Fig. 5-1: Average forward current versus ambient
temperature (δ=0.5) (1N5820/1N5821).
1E-3 1E-2 1E-1 1E+0
0
2
4
6
8
10
12
14
16
IM(A)
t(s)
Ta=100°C
Ta=75°C
Ta=25°C
IM
t
δ=0.5
Fig. 6-1: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5820/1N5821).
1E-1 1E+0 1E+1 1E+2 1E+3
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-a)/Rth(j-a)
T
δ
=tp/T
tp
tp(s)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
Fig. 7: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
Tamb(°C)
T
δ
=tp/T
tp
Rth(j-a)=80°C/W
Rth(j-a)=Rth(j-l)=25°C/W
Fig. 5-2: Average forward current versus ambient
temperature (δ=0.5) (1N5822).
1E-3 1E-2 1E-1 1E+0
0
1
2
3
4
5
6
7
8
9
10
11
12
IM(A)
t(s)
Ta=100°C
Ta=75°C
Ta=25°C
IM
t
δ=0.5
Fig. 6-2: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5822).
12 5102040
10
100
600
C(pF)
VR(V)
1N5822
1N5820
1N5821
F=1MHz
Tj=25°C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
P1-P3P4-P5

1N5821

Mfr. #:
Buy 1N5821
Manufacturer:
ON Semiconductor / Fairchild
Description:
Schottky Diodes & Rectifiers Schottky Barrier
Lifecycle:
New from this manufacturer.
Delivery:
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