ZXMC3A16DN8TA

ZXMC3A16DN8
ISSUE 1 - OCTOBER 2005
7
0.1 1 10
0
200
400
600
800
1000
1200
C
RSS
C
OSS
C
ISS
V
GS
=0V
f=1MHz
C Capacitance (pF)
V
DS
-Drain-SourceVoltage(V)
0 5 10 15 20
0
2
4
6
8
10
I
D
=3.5A
V
DS
= 15V
Gate-SourceVoltagevGateCharge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
V
GS
Gate-Source Voltage (V)
N-CHANNEL TYPICAL CHARACTERISTICS
ZXMC3A16DN8
ISSUE 1 - OCTOBER 2005
8
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
123
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01 0.1 1 10
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
1.5V
10V
4V
3.5V
-V
GS
2.5V
2V
3V
Output Characteristics
T=25°C
-V
GS
-I
D
Drain Current (A)
-V
DS
Drain-Source Voltage (V)
4V
3.5V
3V
2V
1.5V
10V
2.5V
Output Characteristics
T = 150°C
-I
D
Drain Current (A)
-V
DS
Drain-Source Voltage (V)
Typical Transfer Characteristics
-V
DS
=10V
T = 25°C
T = 150°C
-I
D
Drain Current (A)
-V
GS
Gate-Source Voltage (V)
Normalised Curves v Temperature
R
DS(on )
V
GS
=-10V
I
D
= -4.2A
V
GS(th)
V
GS
=V
DS
I
D
= -250uA
Normalised R
DS(on)
and V
GS( t h)
Tj Junction Temperature (°C)
1.5V
10V
3V
2V
4V
3.5V
2.5V
On-Resistance v Drain Current
T=25°C
-V
GS
R
DS(on)
Drain-Source On-Resistance (Ω)
-I
D
Drain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
-V
SD
Source-Drain Voltage (V)
-I
SD
Reverse Drain Current (A)
P-CHANNEL TYPICAL CHARACTERISTICS
ZXMC3A16DN8
ISSUE 1 - OCTOBER 2005
9
0.1 1 10
0
200
400
600
800
1000
1200
1400
C
RSS
C
OSS
C
ISS
V
GS
=0V
f=1MHz
C Capacitance (pF)
-V
DS
-Drain-SourceVoltage(V)
0 5 10 15 20 25
0
2
4
6
8
10
-I
D
=4.2A
-V
DS
= 15V
Gate-SourceVoltagevGateCharge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
-V
GS
Gate-Source Voltage (V)
P-CHANNEL TYPICAL CHARACTERISTICS

ZXMC3A16DN8TA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET N and P Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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