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SBCW33LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 6
1 Publication Order Number:
BCW33LT1/D
BCW33LT1G, SBCW33LT1G
General Purpose Transistor
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
32 Vdc
Collector − Base Voltage V
CBO
32 Vdc
Emitter − Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2),
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
†
ORDERING INFORMATION
SOT−23
(TO−236)
CASE 318−08
STYLE 6
D3 M G
G
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
BCW33LT1G SOT−23
(Pb−Free)
3,000/Tape & Ree
l
†
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
D3 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BCW33LT3G SOT−23
(Pb−Free)
10,000/Tape & Ree
l
SBCW33LT1G SOT−23
(Pb−Free)
3,000/Tape & Ree
l
www.onsemi.com
BCW33LT1G, SBCW33LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
32 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CBO
32 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0 −
Vdc
Collector Cutoff Current
(V
CB
= 32 Vdc, I
E
= 0)
(V
CB
= 32 Vdc, I
E
= 0, T
A
= 100°C)
I
CBO
−
−
100
10
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
hFE
420 800
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
V
CE(sat)
− 0.25
Vdc
Base−Emitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
0.55 0.70
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 4.0
pF
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
− 10
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Turn−On Time Figure 2. Turn−Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
C
S
< 4.0 pF*
10 k
+3.0 V
275
C
S
< 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
-0.5 V
<1.0 ns
10 < t
1
< 500 ms
DUTY CYCLE = 2%
+10.9 V
0
-9.1 V
< 1.0 ns
t
1
BCW33LT1G, SBCW33LT1G
www.onsemi.com
3
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10 20 50 100 200 500 1k 2k 5k 10k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
R
S
= 0
I
C
= 1.0 mA
100 mA
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
30 mA
BANDWIDTH = 1.0 Hz
R
S
≈∞
10 mA
300 mA
I
C
= 1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
Figure 5. Narrow Band, 100 Hz
I
C
, COLLECTOR CURRENT (mA)
500k
Figure 6. Narrow Band, 1.0 kHz
I
C
, COLLECTOR CURRENT (mA)
10
2.0 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Wideband
I
C
, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESISTANCE (OHMS)
Noise Figure is defined as:
NF + 20 log
10
ǒ
e
n
2
) 4KTR
S
) I
n
2
R
S
2
4KTR
S
Ǔ
1ń2
= Noise Voltage of the Transistor referred to the input. (Figure 3
)
= Noise Current of the Transistor referred to the input. (Figure 4
)
= Boltzman’s Constant (1.38 x 10
−23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
e
n
I
n
K
T
R
S
3.0 dB
4.0 dB
6.0 dB
10 dB
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500k
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
1M
500k
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
P1-P3P4-P6

SBCW33LT1G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SILICON TRANSISTOR PLAST
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