NDS356P

P1-P3 P4-P6 P7-P7

NDS356P Rev. E1

-3-2.5-2-1.5-1-0.50

-5

-4

-3

-2

-1

0

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

-6.0

-5.0

-4.5

-3.0

V = -10V

GS

DS

D

-4.0

-3.5

-5-4-3-2-10

0.5

0.75

1

1.25

1.5

1.75

2

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -3.5 V

GS

D

R , NORMALIZED

DS(on)

-4.0

-6.0

-10

-5.0

-4.5

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage

Typical Electrical Characteristics

-6-5-4-3-2-10

0.5

1

1.5

2

2.5

3

3.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

T = 125°C

J

25°C

-55°C

D

V = 4.5V

GS

R , NORMALIZED

DS(on)

Figure 3. On-Resistance Variation

with Temperature

Figure 4. On-Resistance Variation

with Drain Current and Temperature

-8-6-4-20

-10

-8

-6

-4

-2

0

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25

125

V = 10V

DS

GS

D

T = -55°C

J

-50 -25 0 25 50 75 100 125 150

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE (V)

J

I = -250µA

D

V = V

DS GS

V , NORMALIZED

th

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation

with Temperature

-50 -25 0 25 50 75 100 125 150

0.8

0.9

1

1.1

1.2

1.3

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = -4.5 V

GS

I = -1.1 A

D

R , NORMALIZED

DS(ON)

NDS356P Rev. E1

-50 -25 0 25 50 75 100 125 150

0.96

0.98

1

1.02

1.04

1.06

1.08

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE (V)

I = -250µA

D

BV , NORMALIZED

DSS

J

-1.8-1.5-1.2-0.9-0.6-0.3

0.001

0.01

0.1

0.2

0.5

1

2

10

V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

25°C

-55°C

T = 125°C

J

V = 0V

GS

SD

S

Figure 7. Breakdown Voltage Variation with

Temperature

Figure 8. Body Diode Forward Voltage Variation with

Source Current and Temperature

Typical Electrical Characteristics (continued)

0 1 2 3 4 5 6 7

-10

-8

-6

-4

-2

0

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

I = -1.1 A

D

g

GS

V = -5 V

DS

-10

0.1 0.2 0.5 1 2 5 10 20

30

50

100

200

300

500

700

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0 V

GS

C

oss

C

rss

G

D

S

V

DD

R

L

V

V

IN

OUT

V

GS

DUT

R

GEN

10%

50%

90%

10%

90%

90%

50%

V

IN

V

OUT

on off

d(off)

f

r

d(on)

t t

t

tt

t

INVERTED

10%

PULSE WIDTH

Figure 9. Capacitance Characteristics

Figure 10. Gate Charge Characteristics

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

NDS356P Rev. E1

-10-8-6-4-20

0

1

2

3

4

5

I , DRAIN CURRENT (A)

g , TRANSCONDUCTANCE (SIEMENS)

T = -55°C

J

25°C

D

FS

V = -5V

DS

125°C

0.1 0.2 0.5 1 2 5 10 20 30

0.01

0.02

0.05

0.1

0.2

1

5

10

20

- V , DRAIN-SOURCE VOLTAGE (V)

- I , DRAIN-SOURCE CURRENT (A)

DS

D

V = -10V

SINGLE PULSE

T = 25°C

GS

A

DC

RDS(ON) LIMIT

1s

100ms

10s

10ms

1ms

100us

Figure 13. Transconductance Variation with

Drain Current and Temperature

Figure 14. Maximum Safe Operating Area

Typical Electrical Characteristics (continued)

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 250 °C/W

θ

JA

θ

JA

θ

JA

T - T = P * R (t)

θ

JA

A

J

P(pk)

t

1

t

2

Figure 15. Transient Thermal Response Curve

Note : Characterization performed using the conditions described in note 1c. Transient thermal response will

change depending on the circuit board design.

P1-P3 P4-P6 P7-P7

NDS356P

Mfr. #:

Manufacturer:

ON Semiconductor

Description:

MOSFET P-CH 20V 1.1A SSOT-3

Lifecycle:

New from this manufacturer.

Delivery:

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NDS356P