TSM2301CX RFG Datasheet TSM2301CX RFG | P1-P3

TSM2301

20V P-Channel MOSFET

Document Number: DS_P0000258 1 Version: B15

SOT

-

23

Features

● Advance Trench Process Technology

● High Density Cell Design for Ultra Low On-resistance

Application

● Load Switch

● PA Switch

Ordering Information

Part No. Package

Packing

TSM2301CX RFG

SOT-23 3Kpcs / 7” Reel

Note: “G” denotes for Halogen Free

Absolute Maximum Rating (Ta = 25°C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

-20 V

Gate-Source Voltage V

GS

±8 V

Continuous Drain Current, V

GS

@4.5V. I

D

-2.8 A

Pulsed Drain Current, V

GS

@4.5V I

DM

-8 A

Continuous Source Current (Diode Conduction)

a,b

I

S

-0.72 A

Maximum Power Dissipation

Ta = 25°C

P

D

0.9

W

Ta = 75°C 0.57

Operating Junction Temperature T

J

+150 °C

Operating Junction and Storage Temperature Range T

J

, T

STG

- 55 to +150 °C

Thermal Performance

Parameter Symbol Limit Unit

Lead Temperature (1/8” from case) T

L

5 S

Junction to Ambient Thermal Resistance (PCB mounted) RӨ

JA

120 °C/W

Notes:

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 5 sec.

c. Surface Mounted on FR4 Board,

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(mΩ) I

D

(A)

-20

130 @ V

GS

= -4.5V -2.8

190 @ V

GS

= -2.5V -2.0

Definition

:

1. Gate

2. Source

3. Drain

Block Diagram

P-Channel MOSFET

Not Recommended

TSM2301

20V P-Channel MOSFET

Document Number: DS_P0000258 2 Version: B15

Electrical Specifications (Ta = 25°C unless otherwise noted)

Parameter Conditions Symbol

Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

GS

= 0V, I

D

= -250uA BV

DSS

-20 -- -- V

Gate Threshold Voltage V

DS

= V

GS

, I

D

= -250µA V

GS(TH)

-0.45 -- -0.95 V

Gate Body Leakage V

GS

= ±8V, V

DS

= 0V I

GSS

-- -- ±100 nA

Zero Gate Voltage Drain Current V

DS

= -9.6V, V

GS

= 0V I

DSS

-- -- -1.0 µA

On-State Drain Current

a

V

DS

= -10V, V

GS

= -5V I

D(ON)

-6 -- -- A

Drain-Source On-State Resistance

a

V

GS

= -4.5V, I

D

= -2.8A

R

DS(ON)

-- 85 130

mΩ

V

GS

= -2.5V, I

D

= -2.0A -- 122 190

Forward Transconductance

a

V

DS

= -5V, I

D

= -4A g

fs

-- 6.5 -- S

Diode Forward Voltage I

S

= -0.75A, V

GS

= 0V V

SD

-- - 0.8 -1.2 V

Dynamic

b

Total Gate Charge

V

DS

= -6V, I

D

= -2.8A,

V

GS

= -4.5V

Q

g

--

5.4 10

nC

Gate-Source Charge Q

gs

--

0.8 --

Gate-Drain Charge Q

gd

--

1.1 --

Input Capacitance

V

DS

= -6V, V

GS

= 0V,

f = 1.0MHz

C

iss

--

447 --

pF

Output Capacitance C

oss

--

127 --

Reverse Transfer Capacitance C

rss

--

80 --

Switching

c

Turn-On Delay Time

V

DD

= -6V, R

L

= 6Ω,

I

D

= -1A, V

GEN

= -4.5V,

R

G

= 6Ω

t

d(on)

--

5 25

nS

Turn-On Rise Time t

r

--

19 60

Turn-Off Delay Time t

d(off)

--

95 110

Turn-Off Fall Time t

f

--

65 80

Notes:

a. pulse test: PW = 300µS, duty cycle = 2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

Not Recommended

TSM2301

20V P-Channel MOSFET

Document Number: DS_P0000258 3 Version: B15

Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

Not Recommended

TSM2301CX RFG

TSM2301CX RFG

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