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D45VH10G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 8
1 Publication Order Number:
D44VH/D
D44VH10(NPN),
D45VH10 (PNP)
Complementary Silicon
Power Transistors
These complementary silicon power transistors are designed for
high−speed switching applications, such as switching regulators and
high frequency inverters. The devices are also well−suited for drivers
for high power switching circuits.
Features
• Fast Switching
• Key Parameters Specified @ 100°C
• Low Collector−Emitter Saturation Voltage
• Complementary Pairs Simplify Circuit Designs
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Collector−Emitter Voltage V
CEV
100 Vdc
Emitter Base Voltage V
EB
7.0 Vdc
Collector Current − Continuous I
C
15 Adc
Collector Current − Peak (Note 1) I
CM
20 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
83
0.67
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case
R
q
JC
1.5 °C/W
Thermal Resistance, Junction to Ambient
R
q
JA
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
275 °C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MARKING DIAGRAM
15 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
80 V, 83 W
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
D44VH10G TO−220
(Pb−Free)
50 Units/Rail
D45VH10G TO−220
(Pb−Free)
50 Units/Rail
www.onsemi.com
TO−220
CASE 221A
STYLE 1
1
2
3
4
D4xVH10G
AYWW
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
D44VH10 (NPN), D45VH10 (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 25 mAdc, I
B
= 0)
V
CEO(sus)
80 − −
Vdc
Collector−Emitter Cutoff Current
(V
CE
= Rated V
CEV
, V
BE(off)
= 4.0 Vdc)
(V
CE
= Rated V
CEV
, V
BE(off)
= 4.0 Vdc, T
C
= 100°C)
I
CEV
−
−
−
−
10
100
mAdc
Emitter Base Cutoff Current
(V
EB
= 7.0 Vdc, I
C
= 0)
I
EBO
− − 10
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 1.0 Vdc)
h
FE
35
20
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.4 Adc)
D44VH10
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
D45VH10
(I
C
= 15 Adc, I
B
= 3.0 Adc, T
C
= 100°C)
D44VH10
D45VH10
V
CE(sat)
−
−
−
−
−
−
−
−
0.4
1.0
0.8
1.5
Vdc
Base−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.4 Adc)
D44VH10
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
D45VH10
(I
C
= 8.0 Adc, I
B
= 0.4 Adc, T
C
= 100°C)
D44VH10
(I
C
= 8.0 Adc, I
B
= 0.8 Adc, T
C
= 100°C)
D45VH10
V
BE(sat)
−
−
−
−
−
−
−
−
1.2
1.0
1.1
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(I
C
= 0.1 Adc, V
CE
= 10 Vdc, f = 20 MHz)
f
T
− 50 −
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
C
= 0, f
test
= 1.0 MHz)
D44VH10
D45VH10
C
ob
−
−
120
275
−
−
pF
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 20 Vdc, I
C
= 8.0 Adc, I
B1
= I
B2
= 0.8 Adc)
t
d
− − 50
ns
Rise Time t
r
− − 250
Storage Time t
s
− − 700
Fall Time t
f
− − 90
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
D44VH10 (NPN), D45VH10 (PNP)
www.onsemi.com
3
Figure 1. D44VH10 DC Current Gain Figure 2. D45VH10 DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS) I
C
, COLLECTOR CURRENT (AMPS)
1010.10.01
10
100
1000
1010.10.01
10
100
1000
h
FE
, DC CURRENT GAIN
V
CE
= 1 V
125°C
h
FE
, DC CURRENT GAIN
Figure 3. D44VH10 DC Current Gain Figure 4. D45VH10 DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS) I
C
, COLLECTOR CURRENT (AMPS)
1010.10.01
10
100
1000
1010.10.01
10
100
1000
h
FE
, DC CURRENT GAIN
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
Figure 5. D44VH10 ON−Voltage Figure 6. D45VH10 ON−Voltage
I
C
, COLLECTOR CURRENT (AMPS) I
C
, COLLECTOR CURRENT (AMPS)
1010.1
0
0.05
0.40
1010.1
0
0.1
0.3
0.6
SATURATION VOLTAGE (VOLTS)
V
CE(sat)
@ I
C
/I
B
= 10
SATURATION VOLTAGE (VOLTS)
−40°C
25°C
V
CE
= 1 V
125°C
−40°C
25°C
125°C
−40°C
25°C
V
CE
= 5 V
125°C
−40°C
25°C
125°C
−40°C
25°C
0.10
0.15
0.20
0.25
0.30
0.35
0.2
0.5
0.4
V
CE(sat)
@ I
C
/I
B
= 10
125°C
−40°C
25°C
P1-P3P4-P5

D45VH10G

Mfr. #:
Buy D45VH10G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 15A 80V 83W PNP
Lifecycle:
New from this manufacturer.
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