APTGT100H170G Datasheet APTGT100H170G | P1-P3

APTGT100H170G

APTGT100H170G – Rev 2 October, 2012

www.microsemi.com

1-6

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1700 V

T

C

= 25°C

150

I

C

Continuous Collector Current

T

C

= 80°C

100

I

CM

Pulsed Collector Current T

C

= 25°C 200

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

560 W

RBSOA Reverse Bias Safe Operating Area T

j

= 125°C 200A @ 1600V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note

APT0502 on www.microsemi.com

G4

0/VBUS

E3

Q3

G3

OUT2

VBUS

E1

Q1

G1

E4

Q4

OUT1

E2

Q2

G2

V

CES

= 1700V

I

C

= 100A @ Tc = 80°C

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Trench + Field Stop IGBT3

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Kelvin emitter for easy drive

 Very low stray inductance

- Symmetrical design

- M5 power connectors

 High level of integration

Benefits

 Stable temperature behavior

 Very rugged

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Easy paralleling due to positive TC of VCEsat

 Low profile

 RoHS Compliant

Full - Bridge

Trench + Field Stop IGBT3

Power Module

APTGT100H170G

APTGT100H170G – Rev 2 October, 2012

www.microsemi.com

2-6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1700V 350 µA

T

j

= 25°C 2.0 2.4

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

= 15V

I

C

= 100A

T

j

= 125°C 2.4

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 2mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 500 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 9

C

oes

Output Capacitance 0.36

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

0.3

nF

T

d(on)

Turn-on Delay Time 370

T

r

Rise Time 40

T

d(off)

Turn-off Delay Time 650

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= 15V

V

Bus

= 900V

I

C

= 100A

R

G

= 4.7 

180

ns

T

d(on)

Turn-on Delay Time 400

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 800

T

f

Fall Time

Inductive Switching (125°C)

V

GE

= 15V

V

Bus

= 900V

I

C

= 100A

R

G

= 4.7 

300

ns

E

on

Turn-on Switching Energy T

j

= 125°C 32

E

off

Turn-off Switching Energy

V

GE

= 15V

V

Bus

= 900V

I

C

= 100A

R

G

= 4.7 

T

j

= 125°C 31

mJ

Diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1700 V

T

j

= 25°C 350

I

RM

Maximum Reverse Leakage Current V

R

=1700V

T

j

= 125°C 600

µA

I

F

DC Forward Current

Tc = 80°C 100 A

T

j

= 25°C 1.8 2.2

V

F

Diode Forward Voltage I

F

= 100A

T

j

= 125°C 1.9

V

T

j

= 25°C 385

t

rr

Reverse Recovery Time

T

j

= 125°C 490

ns

T

j

= 25°C 28

Q

rr

Reverse Recovery Charge

T

j

= 125°C 46

µC

T

j

= 25°C 12

E

r

Reverse Recovery Energy

I

F

= 100A

V

R

= 900V

di/dt =1600A/µs

T

j

= 125°C 24

mJ

APTGT100H170G

APTGT100H170G – Rev 2 October, 2012

www.microsemi.com

3-6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.22

R

thJC

Junction to Case Thermal Resistance

Diode 0.39

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

To heatsink M6 3 5

Torque Mounting torque

For terminals M5 2 3.5

N.m

Wt Package Weight 300 g

SP6 Package outline

(dimensions in mm)

See application note APT0601 - Mounting Instructions for SP6 Power Modules on

www.microsemi.com

APTGT100H170G

APTGT100H170G

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