FFSP0865A

© Semiconductor Components Industries, LLC, 2017
December, 2017 − Rev. 2
1 Publication Order Number:
FFSP0865A/D
FFSP0865A
Silicon Carbide Schottky
Diode
650 V, 8 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 49 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
www.onsemi.com
TO−220−2LD
CASE 340BB
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSP0865A = Specific Device Code
$Y&Z&3&K
FFSP
0865A
1. Cathode 2. Anode
1
2
FFSP0865A
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Value Unit
V
RRM
Peak Repetitive Reverse Voltage 650 V
E
AS
Single Pulse Avalanche Energy (Note 1) 49 mJ
I
F
Continuous Rectified Forward Current @ T
C
< 155°C 8
A
Continuous Rectified Forward Current @ T
C
< 135°C 13
I
F,
Max
Non-Repetitive Peak Forward Surge Current
T
C
= 25°C, 10 ms
750 A
T
C
= 150°C, 10 ms
730 A
I
F,SM
Non-Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 49 A
I
F,RM
Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 34 A
Ptot Power Dissipation
T
C
= 25°C 98 W
T
C
= 150°C 16 W
T
J
, T
STG
Operating and Storage Temperature Range −55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E
AS
of 49 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 14 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case, Max 1.53 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
V
F
Forward Voltage
I
F
= 8 A, T
C
= 25°C 1.50 1.75
V
I
F
= 8 A, T
C
= 125°C 1.6 2.0
I
F
= 8 A, T
C
= 175°C 1.72 2.40
I
R
Reverse Current
V
R
= 650 V, T
C
= 25°C 200 mA
V
R
= 650 V, T
C
= 125°C 400
V
R
= 650 V, T
C
= 175°C 600
Q
C
Total Capacitive Charge V = 400 V 27 nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz 463
pF
V
R
= 200 V, f = 100 kHz 48
V
R
= 400 V, f = 100 kHz 38
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Marking Package Packing Method Quantity
FFSP0865A FFSP0865A TO−220−2LD
(Pb-Free / Halogen Free)
Tube 50 Units
FFSP0865A
www.onsemi.com
3
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
0.1
10
100
1000
CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
1 10 100 650
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
0.0
0
2
4
6
8
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= −55
o
C
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
1.00.5 1.5 2.0
200
10
−9
10
−8
10
−7
10
−6
10
−5
I
R
, REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= −55
o
C
T
J
= 25
o
C
T
J
= 75
o
C
300 400 500 600 650
25
0
20
40
60
80
100
120
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
I
F
, PEAK FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
50 75 100 125 150 175
25
0
20
40
60
80
100
P
TOT
, POWER DISSIPATION (W)
T
C
, CASE TEMPERATURE (
o
C)
50 75 100 125 150 175
0
0
10
20
30
40
Q
C
, CAPACITIVE CHARGE (nC)
V
R
, REVERSE VOLTAGE (V)
100 200 300 400 500 600 650

FFSP0865A

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SIC TO220 SBD 8A 650V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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