1SS302A
1
Switching Diodes Silicon Epitaxial Planar
1SS302A
1SS302A
1SS302A
1SS302A
Start of commercial production
2014-12
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Ultra-High-Speed Switching
2.
2.
2.
2. Features
Features
Features
Features
(1) Fast reverse recovery time : t
rr
= 1.6 ns (typ.)
(2) AEC-Q101 qualified
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Peak reverse voltage
Reverse voltage
Peak forward current
Average rectified current
Power dissipation
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
P
D
I
FSM
T
j
T
stg
Note
(Note 1)
(Note 1)
(Note 2)
(Note 1), (Note 3)
Rating
85
80
300
100
100
2
150
-55 to 150
Unit
V
mA
mW
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70%
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 3: Measured with a 10 ms pulse.
2015-01-08
Rev.2.0
