PRODUCT SPECIFICATION FAN5059
REV. 1.0.4 8/14/03 13
The softstart ramp begins at T(0) where UVLO is released.
During the period of t
1
the softstart pin ramps but the PWM
switching is not enabled and thus the duty cycle is zero
(D=0) and the output voltage is zero. During t
2
the duty
cycle increased progressively from 0 to 1. This period is
where the output voltage ramps, dependent on output capaci-
tance and output load. If the duration of t
2
is long enough
the output voltage will fully ramp to the point of regulation.
During t
3
the softstart pin continues to ramp but without
effect on the output voltage.
NOTE: If a very large output capacitor bank is used it may
be required to use a larger C
SS
to ensure a full output voltage
ramp within t
2
.
Over-Voltage Protection
The FAN5059 constantly monitors the output voltage for pro-
tection against over-voltage conditions. If the voltage at the
VFB pin exceeds the selected program voltage, an over-volt-
age condition is assumed and the FAN5059 disables the out-
put drive signal to the external high-side MOSFET. The DC-
DC converter returns to normal operation after the output
voltage returns to normal levels.
Oscillator
The FAN5059 oscillator section uses a fixed frequency of
operation of 300KHz.
Design Considerations and Component
Selection
Additional information on design and component selection
may be found in Fairchild’s Application Note 57.
MOSFET Selection
This application requires N-channel Logic Level Enhancement
Mode Field Effect Transistors. Desired characteristics are as
follows:
•Low Static Drain-Source On-Resistance, R
DS,ON
< 20m
(lower is better)
•Low gate drive voltage, V
GS
= 4.5V rated
•Power package with low Thermal Resistance
Drain-Source voltage rating > 15V.
The on-resistance (R
DS,ON)
is the primary parameter for
MOSFET selection. The on-resistance determines the power
dissipation within the MOSFET and therefore significantly
affects the efficiency of the DC-DC Converter. For details
and a spreadsheet on MOSFET selection, refer to Applica-
tions Bulletin AB-8.
Inductor Selection
Choosing the value of the inductor is a tradeoff between
allowable ripple voltage and required transient response. The
system designer can choose any value within the allowed
minimum to maximum range in order to either minimize ripple
or maximize transient performance. The first order equation
(close approximation) for minimum inductance is:
where:
V
in
= Input Power Supply
V
out
= Output Voltage
f = DC/DC converter switching frequency
ESR = Equivalent series resistance of all output capacitors in
parallel
V
ripple
= Maximum peak to peak output ripple voltage budget.
The first order equation for maximum allowed inductance is:
where:
C
o
= The total output capacitance
I
pp
= Maximum to minimum load transient current
V
tb
= The output voltage tolerance budget allocated to load
transient
D
m
= Maximum duty cycle for the DC/DC converter (usually
95%).
Some margin should be maintained away from both L
min
and
L
max
. Adding margin by increasing L almost always adds
expense since all the variables are predetermined by system
performance except for C
O
, which must be increased to
increase L. Adding margin by decreasing L can be done by
purchasing capacitors with lower ESR. The FAN5059
provides significant cost savings for the newer CPU systems
that typically run at high supply current.
FAN5059 Short Circuit Current Characteristics
The FAN5059 protects against output short circuit on the
core supply by turning off both the high-side and low-side
MOSFETs and resetting softstart. The short circuit limit is
set with the R
S
resistor, as given by the formula
Note: R
S
cannot exceed 10.8K. If a higher current is required
than 10.8K allows, a FET with lower R
DSon
must be used.
5V
2.75V
2.25V
t
1
t
2
t
3
V
SS
T
T(0)
L
min
(V
in
– V
out
)
f
x
V
out
V
in
x
ESR
V
ripple
=
L
max
(V
in
– V
out
) D
m
V
tb
I
pp
2
=
2C
O
R
S
I
SC
*R
DS, on
I
Detect
=
FAN5059 PRODUCT SPECIFICATION
14 REV. 1.0.4 8/14/03
with I
Detect
50µA, I
SC
is the desired current limit, and
R
DS,on
the high-side MOSFET’s on resistance. Remember to
make the R
S
large enough to include the effects of initial tol-
erance and temperature variation on the MOSFET’s R
DS,on
.
Alternately, use of a sense resistor in series with the source
of the MOSFET eliminates this source of inaccuracy in the
current limit.
As an example, Figure 4 shows the typical characteristic of
the DC-DC converter circuit with an FDB6030L high-side
MOSFET (R
DS
= 20m maximum at 25°C * 1.25 at 75°C =
25m) and a 8.2K R
S
.
Figure 4. FAN5059 Short Circuit Characteristic
The converter exhibits a normal load regulation characteristic
until the voltage across the MOSFET exceeds the internal
short circuit threshold of 50µA * 8.2K = 410mV, which
occurs at 410mV/25m = 16.4A. (Note that this current limit
level can be as high as 410mV/15m = 27A, if the MOSFET
has typical R
DS,on
rather than maximum, and is at 25°C).
At this point, the internal comparator trips and signals the con-
troller to discharge the softstart capacitor. This causes a drastic
reduction in the output voltage as the load regulation collapses
into the short circuit control mode. With a 40m output short,
the voltage is reduced to 16.4A * 40m = 650mV. The output
voltage does not return to its nominal value until the output
current is reduced to a value within the safe operating ranges
for the DC-DC converter.
If any of the linear regulator outputs are loaded heavily
enough that their output voltage drops below 80% of nominal
for >30µsec, all FAN5059 outputs, including the switcher, are
shut off and remain off until power is recycled.
Schottky Diode Selection
The application circuit of Figure 1 shows a Schottky diode,
D1, which is used as a free-wheeling diode to assure that the
body-diode in Q2 does not conduct when the upper MOSFET
is turning off and the lower MOSFET is turning on. It is
undesirable for this diode to conduct because its high forward
voltage drop and long reverse recovery time degrades efficiency,
and so the Schottky provides a shunt path for the current.
Since this time duration is very short, the selection criterion
for the diode is that the forward voltage of the Schottky at
the output current should be less than the forward voltage of
the MOSFET’s body diode.
Output Filter Capacitors
The output bulk capacitors of a converter help determine its
output ripple voltage and its transient response. It has already
been seen in the section on selecting an inductor that the ESR
helps set the minimum inductance, and the capacitance value
helps set the maximum inductance. For most converters,
however, the number of capacitors required is determined by
the transient response and the output ripple voltage, and these
are determined by the ESR and not the capacitance value.
That is, in order to achieve the necessary ESR to meet the
transient and ripple requirements, the capacitance value
required is already very large.
The most commonly used choice for output bulk capacitors is
aluminum electrolytics, because of their low cost and low ESR.
The only type of aluminum capacitor used should be those that
have an ESR rated at 100kHz. Consult Application Bulletin
AB-14 for detailed information on output capacitor selection.
The output capacitance should also include a number of
small value ceramic capacitors placed as close as possible to
the processor; 0.1µF and 0.01µF are recommended values.
Input Filter
The DC-DC converter design may include an input inductor
between the system +5V supply and the converter input as
shown in Figure 5. This inductor serves to isolate the +5V
supply from the noise in the switching portion of the DC-DC
converter, and to limit the inrush current into the input capac-
itors during power up. A value of 2.5µH is recommended.
It is necessary to have some low ESR aluminum electrolytic
capacitors at the input to the converter. These capacitors
deliver current when the high side MOSFET switches on.
Figure 5 shows 3 x 1000µF, but the exact number required
will vary with the speed and type of the processor. For the
top speed Katmai and Coppermine, the capacitors should be
rated to take 9A and 6A of ripple current respectively.
Capacitor ripple current rating is a function of temperature,
and so the manufacturer should be contacted to find out the
ripple current rating at the expected operational temperature.
For details on the design of an input filter, refer to Applica-
tions Bulletin AB-15.
Figure 5. Input Filter
V
OUT
(V)
0 5 10 15 20 25
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
CPU Output Voltage vs. Output Current
2.5µH
5V
0.1µF
1000µF, 10V
Electrolytic
Vin
PRODUCT SPECIFICATION FAN5059
REV. 1.0.4 8/14/03 15
Programmable Active Droop
The FAN5059 includes Programmable Active Droop
: as
the output current increases, the output voltage drops, and
the amount of this drop is user adjustable. This is done in
order to allow maximum headroom for transient response of
the converter. The current is typically sensed by measuring
the voltage across the R
DS,on
of the high-side MOSFET dur-
ing its on time, as shown in Figure 1.
To program the amount of droop, use the formula
where I
max
is the current at which the droop occurs, and R
sense
is the resistance of the current sensor, either the source resistor
or the high-side MOSFET’s on-resistance. For example, to
get 30mV of droop with a maximum output current of 12.5A
and a 10m sense resistor, use R
D
= 14.4K * 12.5A * 10m/
(30mV * 18) = 3.33K. Further details on use of the
Programmable Active Droop
may be found in Applications
Bulletin AB-24.
Remote Sense
The FAN5059 offers remote sense of the output voltage to
minimize the output capacitor requirements of the converter.
It is highly recommended that the remote sense pin, Pin 20,
be tied directly to the processor power pins, so that the
effects of power plane impedance are eliminated. Further
details on use of the remote sense feature of the FAN5059
may be found in Applications Bulletin AB-24.
Adjusting the Linear Regulators’ Output Voltages
Any or all of the linear regulators’ outputs may be adjusted
high to compensate for voltage drop along traces, as shown
in Figure 6.
Figure 6. Adjusting the Output Voltage of the Linear
Regulator
The resistor value should be chosen as
Note: See Note 4 in Electrical Specifications Table.
For example, to get the V
TT
voltage to be 1.55V instead of
1.50V, use R = 10K * [(1.55/1.50) – 1] = 333.
Using the FAN5059 for Vnorthbridge = 1.8V
In some motherboards, Intel requires that the AGP power can not
be greater than 2.2V while the chipset voltage (Vnorthbridge =
1.8V) is less than 1.0V. The FAN5059 can accomplish this by
using the VTT regulator to generate Vnorthbridge. Use the circuit
in Figure 6 with R = 2K. Since the linear regulators on the
FAN5059 all rise proportionally to one another, when Vnorth-
bridge = 1.0V, Vagp = 1.8V, meeting the Intel requirement.
PCB Layout Guidelines
Placement of the MOSFETs relative to the FAN5059 is
critical. Place the MOSFETs such that the trace length of
the HIDRV and LODRV pins of the FAN5059 to the FET
gates is minimized. A long lead length on these pins will
cause high amounts of ringing due to the inductance of the
trace and the gate capacitance of the FET. This noise radiates
throughout the board, and, because it is switching at such
a high voltage and frequency, it is very difficult to suppress.
In general, all of the noisy switching lines should be kept
away from the quiet analog section of the FAN5059. That
is, traces that connect to pins 1, 2, 23, and 24 (HIDRV, SW,
LODRV and VCCP) should be kept far away from the
traces that connect to pins 3, 20 and 21.
Place the 0.1µF decoupling capacitors as close to the
FAN5059 pins as possible. Extra lead length on these
reduces their ability to suppress noise.
Each VCC and GND pin should have its own via to the
appropriate plane. This helps provide isolation between pins.
Place the MOSFETs, inductor, and Schottky as close
together as possible for the same reasons as in the first
bullet above. Place the input bulk capacitors as close to
the drains of the high side MOSFETs as possible. In
addition, placement of a 0.1µF decoupling cap right on the
drain of each high side MOSFET helps to suppress some
of the high frequency switching noise on the input of the
DC-DC converter.
Place the output bulk capacitors as close to the CPU as
possible to optimize their ability to supply instantaneous
current to the load in the event of a current transient.
Additional space between the output capacitors and the
CPU will allow the parasitic resistance of the board traces
to degrade the DC-DC converter’s performance under
severe load transient conditions, causing higher voltage
deviation. For more detailed information regarding
capacitor placement, refer to Application Bulletin AB-5.
•A PC Board Layout Checklist is available from Fairchild
Applications. Ask for Application Bulletin AB-11.
Additional Information
For additional information contact Fairchild Semiconductor at
http://www.fairchildsemi.com/cf/tsg.htm or contact an autho-
rized representative in your area.
R
D
14.4K *I
max
*R
sense
V
Droop
*18
VFB
VGATE
VOUT
10K
R
R 10K*–1
V
out
V
nom
=

FAN5059MX

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