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IXTH6N150

P1-P3P4-P5
© 2012 IXYS CORPORATION, All Rights Reserved
DS100233B(05/12)
High Voltage
Power MOSFETs
IXTT6N150
IXTH6N150
V
DSS
= 1500V
I
D25
=6A
R
DS(on)
≤≤
≤≤
≤ 3.5
ΩΩ
ΩΩ
Ω
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1500 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1500 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C6A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
24 A
I
A
T
C
= 25°C3A
E
AS
T
C
= 25°C 500 mJ
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
,T
J
≤ 150°C 5 V/ns
P
D
T
C
= 25°C 540 W
T
J
- 55 ... +150 °C
T
JM
150 °C
T
stg
- 55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO247) 1.13 / 10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 1500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 3.0 5.0 V
I
GSS
V
GS
= ±20V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 μA
T
J
= 125°C 250 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 3.5 Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
S
D (Tab)
D
TO-268 (IXTT)
S
G
D (Tab)
Features
z
International Standard Packages
z
Molding Epoxies Weet UL 94 V-0
Flammability Classification
z
Fast Intrinsic Diode
z
Low Package Inductance
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
High Voltage Power Supplies
z
Capacitor Discharge
z
Pulse Circuits
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT6N150
IXTH6N150
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 4.0 6.5 mS
C
iss
2230 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 170 pF
C
rss
64 pF
t
d(on)
22 ns
t
r
20 ns
t
d(off)
50 ns
t
f
38 ns
Q
g(on)
67 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
12 nC
Q
gd
36 nC
R
thJC
0.23 °C/W
R
thCS
TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 6 A
I
SM
Repetitive, Pulse Width Limited by T
JM
24 A
V
SD
I
F
= 6A, V
GS
= 0V, Note 1 1.3 V
t
rr
1.5 μs
I
RM
12 A
Q
RM
9 μC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3Ω (External)
I
F
= 3A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
TO-247 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2012 IXYS CORPORATION, All Rights Reserved
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
1
2
3
4
5
6
0 2 4 6 8 1012141618
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7
V
5
V
6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7
V
6
V
5
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
1
2
3
4
5
6
0 5 10 15 20 25 30 35 40
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5
V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 3A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 6A
I
D
= 3A
Fig. 5. R
DS(on)
Normalized to I
D
= 3A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
012345678910
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
1
2
3
4
5
6
7
-50-250 255075100125150
T
C
- Degrees Centigrade
I
D
- Amperes
IXTT6N150
IXTH6N150
P1-P3P4-P5

IXTH6N150

Mfr. #:
Buy IXTH6N150
Manufacturer:
Littelfuse
Description:
MOSFET HIGH VOLT PWR MOSFET 1500V 6A
Lifecycle:
New from this manufacturer.
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