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IXGH90N60B3

P1-P3P4-P6
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH90N60B3
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
200
200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 2Ω
dV / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 90A
I
G
= 10 mA
Fig. 9. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2008 IXYS CORPORATION, All rights reserved
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
2 3 4 5 6 7 8 9 101112131415
R
G
- Ohms
E
off
- MilliJoules
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 90A
I
C
= 60A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
120
140
160
180
200
220
240
260
280
300
320
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
130
140
150
160
170
180
190
200
210
220
230
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 90A, 60A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
240
250
260
270
280
290
300
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
f
- Nanoseconds
100
200
300
400
500
600
700
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 480V
I
C
= 90A
I
C
= 60A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0
1
2
3
4
5
6
7
8
30 40 50 60 70 80 90
I
C
- Amperes
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω
,
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0
1
2
3
4
5
6
7
8
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2Ω
,
V
GE
= 15V
V
CE
= 480V
I
C
= 90A
I
C
= 60A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
0
50
100
150
200
250
300
350
400
450
30 40 50 60 70 80 90
I
C
- Amperes
t
f
- Nanoseconds
120
140
160
180
200
220
240
260
280
300
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
IXGH90N60B3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH90N60B3
IXYS REF: G_90N60B3(85) 4-24-08
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
0
10
20
30
40
50
60
70
80
90
30 35 40 45 50 55 60 65 70 75 80 85 90
I
C
- Amperes
t
r
- Nanoseconds
25
26
27
28
29
30
31
32
33
34
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
0
20
40
60
80
100
120
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
28
29
30
31
32
33
34
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 60A
I
C
= 90A
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
30
40
50
60
70
80
90
100
110
120
130
23456789101112131415
R
G
- Ohms
t
r
- Nanoseconds
0
10
20
30
40
50
60
70
80
90
100
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 60A
I
C
= 90A
P1-P3P4-P6

IXGH90N60B3

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IGBT 600V 75A 660W TO247
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