STPS40170C
4/8
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 9: Forward voltage drop versus forward
current (per diode, low level)
Figure 10: Forward voltage drop versus
forward current (per diode, high level)
Figure 11: Thermal resistance junction to am-
bient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm) (D
2
PAK)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
I
R
(µA)
T
j
=150°C
T
j
=125°C
T
j
=25°C
T
j
=100°C
T
j
=75°C
T
j
=50°C
V
R
(V)
10
100
1000
1 10 100 1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
I
FM
(A)
V
FM
(V)
0
2
4
6
8
10
12
14
16
18
20
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
I
FM
(A)
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
V
FM
(V)
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
R
th(j-a)
(°C/W)
D²PAK
S
CU
(cm²)
