STPS40170C
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Table 3: Absolute Ratings (limiting values, per diode)
Table 4: Thermal Parameters
Table 5: Static Electrical Characteristics (per diode)
Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs,
δ < 2%
To evaluate the conduction losses use the following equation: P = 0.64 x I
F(AV)
+ 0.055 I
F
2
(RMS)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 170 V
I
F(RMS)
RMS forward current 60 A
I
F(AV)
Average forward current
T
c
= 150 °C δ = 0.5
Per diode
Per device
20
40
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
250 A
P
ARM
Repetitive peak avalanche power
t
p
= 1 µs T
j
= 25 °C
14100 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
* : thermal runaway condition for a diode on its own heatsink
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Total
1.2
0.85
°C/W
R
th(c)
Coupling
0.5
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
*
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
30 µA
T
j
= 125 °C
730 mA
V
F
**
Forward voltage drop
T
j
= 25 °C
I
F
= 20A
0.92
V
T
j
= 125 °C
0.69 0.75
T
j
= 25 °C
I
F
= 40A
1.00
T
j
= 125 °C
0.79 0.86
Ptot
dTj
--------------
1
Rth j a–()
--------------------------
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