Nexperia
PESD2IVN24-U
ESD protection for In-vehicle networks
PESD2IVN24-U All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 29 December 2017 4 / 12
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff
voltage
T
amb
= 25 °C - - 24 V
V
BR
breakdown voltage I
R
= 10 mA; T
amb
= 25 °C [1] 25.5 30.5 35.5 V
I
RM
reverse leakage
current
V
RWM
= 24 V; T
amb
= 25 °C [1] - 1 50 nA
C
d
diode capacitance f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C [1] - 14 17 pF
I
PPM
= 1 A; t
p
= 8/20 μs; T
amb
= 25 °C [2] [1] - 31 40 V
I
PPM
= 3.5 A; t
p
= 8/20 μs; T
amb
= 25 °C [2] [1] - 33 42 V
V
CL
clamping voltage
I
PP
= 16 A; t
p
= TLP; T
amb
= 25 °C [3] [1] - 32 - V
R
dyn
dynamic resistance I
R
= 10 A; T
amb
= 25 °C [3] [1] - 0.2 - Ω
[1] Measured from pin 1 or 2 to pin 3.
[2] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[3] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008
006aaa676
- V
CL
- V
BR
- V
RWM
V
CL
V
BR
V
RWM
- I
RM
I
RM
- I
R
I
R
- I
PP
I
PP
-
+
Fig. 3. V-I characteristics for a bidirectional ESD
protection diode
V
R
(V)
-25 255-5-15 15
aaa-027710
16
C
d
(pF)
0
2
4
6
8
10
12
14
Fig. 4. Diode capacitance as a function of reverse
voltage; typical values
