BAT54XY All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 3 — 8 October 2012 3 of 9
NXP Semiconductors
BAT54XY
Schottky barrier quadruple diode
6. Thermal characteristics
[1] Soldering point at pins 2, 3, 5 and 6.
7. Characteristics
[1] Pulse test: t
p
300 s; 0.02.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance from junction to
solder point
in free air
[1]
--260K/W
Table 7. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage
[1]
I
F
= 0.1 mA - - 240 mV
I
F
= 1 mA - - 320 mV
I
F
=10mA --400mV
I
F
=30mA --500mV
I
F
= 100 mA - - 800 mV
I
R
reverse current V
R
=25V --2A
C
d
diode capacitance V
R
=1V; f=1MHz --10pF
(1) T
amb
= 125 C
(2) T
amb
=85C
(3) T
amb
=25C
(1) T
amb
= 125 C
(2) T
amb
=85C
(3) T
amb
=25C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
006aac829
V
F
(V)
0.0 1.20.80.4
1
10
10
2
10
3
I
F
(mA)
10
-1
(1)
(1)
(2)
(2) (3)
(3)
9
9
,
5
$
