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NTD25P03LT4G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1 Publication Order Number:
NTD25P03L/D
NTD25P03L, STD25P03L
Power MOSFET
−25 A, −30 V, Logic Level P−Channel DPAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
The source−to−drain diode recovery time is comparable to a discrete
fast recovery diode.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 V
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
V
GS
V
GSM
±15
±20
V
Vpk
Drain Current
− Continuous @ T
A
= 25°C
− Single Pulse (t
p
≤ 10 ms)
I
D
I
DM
−25
−75
A
Apk
Total Power Dissipation @ T
A
= 25°C P
D
75 W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
Peak I
L
= 20 Apk, L = 1.0 mH, R
G
= 25 W)
E
AS
200 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
1.65
67
120
°C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8 in from case for 10 seconds)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
A = Assembly Location*
Y = Year
WW = Work Week
25P03L = Device Code
G = Pb−Free Package
See detailed ordering and shipping information on page 7 o
f
this data sheet.
ORDERING INFORMATION
D
S
G
P−Channel
−30 V
51 mW @ 5.0 V
R
DS(on)
Typ
−25 A
I
D
MaxV
(BR)DSS
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
AYWW
25P
03LG
1
2
3
4
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD25P03L, STD25P03L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= −250 mA)
Temperature Coefficient (Positive)
V
(BR)DSS
−30
−24
V
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= −30 Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
= −30 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−1.0
−100
mA
Gate−Body Leakage Current
(V
GS
= ±15 Vdc, V
DS
= 0 Vdc)
I
GSS
−100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250 mAdc)
Temperature Coefficient (Negative)
V
GS(th)
−1.0 −1.6
4.0
−2.0
V
mV/°C
Static Drain−to−Source On−State Resistance
(V
GS
= −5.0 Vdc, I
D
= −12.5 Adc)
(V
GS
= −5.0 Vdc, I
D
= −25 Adc)
(V
GS
= −4.0 Vdc, I
D
= −10 Adc)
R
DS(on)
0.051
0.056
0.065
0.072
0.080
0.090
W
Forward Transconductance
(V
DS
= −8.0 Vdc, I
D
= −12.5 Adc)
g
FS
13
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= −25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
900 1260
pF
Output Capacitance C
oss
290 410
Reverse Transfer Capacitance C
rss
105 210
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
(V
DD
= −15 Vdc, I
D
= −25 A,
V
GS
= −5.0 V,
R
G
= 1.3 W)
t
d(on)
9.0 20
ns
Rise Time t
r
37 75
Turn−Off Delay Time t
d(off)
15 30
Fall Time t
f
16 55
Gate Charge
(V
DS
= −24 Vdc,
V
GS
= −5.0 Vdc,
I
D
= −25 A)
Q
T
15 20
nC
Q
1
3.0
Q
2
9.0
Q
3
7.0
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage (I
S
= −25 Adc, V
GS
= 0 V)
(I
S
= −25 Adc, V
GS
= 0 V, T
J
= 125°C)
V
SD
−1.0
−0.9
−1.5 V
Reverse Recovery Time
(I
S
= −25 A, V
GS
= 0 V,
dI
S
/dt = 100 A/ms)
t
rr
35
ns
t
a
20
t
b
14
Reverse Recovery Stored Charge Q
RR
0.035
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
NTD25P03L, STD25P03L
http://onsemi.com
3
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
1.6
0.8
1.2
0.6
100
10
10,000
0
40
5
20
1
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D
, DRAIN CURRENT (AMPS)
0
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−I
D
, DRAIN CURRENT (AMPS)
0
0.25
0.15
252015
0.1
0.05
0
530
Figure 3. On−Resistance versus Drain Current
and Temperature
−I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
−I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
−I
DSS
, LEAKAGE (nA)
−50 0−25 5025
4215
0152010 3
0
5
10
30
V
DS
≥ −5 V
T
J
= 25°C
T
J
= −40°C
T
J
= 125°C
150
I
D
= −12.5
V
GS
= −5 V
50
0.3
V
GS
= 10 V
V
GS
= −5 V
3
40
20
0
10
30
50
0
0.075
0.05
2015
0.025
0
10 5
0
0.01
1000
T
J
= 25°C
T
J
= 25°C
24
9 V
8 V
4.5 V
3 V
3
10 4035 45 50
0.2
T = 125°C
T = −40°C
T = 25°C
54540353025
V
GS
= −5 V
V
GS
= −10 V
1
10075 125
1.4
25
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
2.5 V
3.5 V
4 V
5 V
6 V
7 V
6
P1-P3P4-P6P7-P8

NTD25P03LT4G

Mfr. #:
Buy NTD25P03LT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET -30V -25A P-Channel
Lifecycle:
New from this manufacturer.
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