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NTS4101PT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 3
1 Publication Order Number:
NTS4101P/D
NTS4101P
Power MOSFET
−20 V, −1.37 A, Single P−Channel, SC−70
Features
• Leading −20 V Trench for Low R
DS(on)
• −2.5 V Rated for Low Voltage Gate Drive
• SC−70 Surface Mount for Small Footprint (2x2 mm)
• Pb−Free Package is Available
Applications
• High Side Load Switch
• Charging Circuit
• Single Cell Battery Applications such as: Cell Phones,
Digital Cameras, PDAs
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±8 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−1.37
A
T
A
= 70°C −0.62
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.329 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
−4.0 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode), Continuous I
S
−0.5 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Units
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
380 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
S
G
D
Device Package Shipping
†
ORDERING INFORMATION
NTS4101PT1 SOT−323 3000/Tape & Reel
P−Channel MOSFET
SC−70/SOT−323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
2
1
3
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ I
D
Max
−20 V
83 mW @ −4.5 V
88 mW @ −3.6 V
104 mW @ −2.5 V
−1.37 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS4101PT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
TT M G
G
1
2
3
GS
D
TT = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NTS4101P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
=25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 −24.5 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
−13.7 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −16 V
T
J
= 25°C −1.0 mA
T
J
= 70°C −5.0
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.45 −0.64 −1.5 V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
2.7 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −1.0 A 83 120
mW
V
GS
= −3.6 V, I
D
= −0.7 A 88 130
V
GS
= −2.5 V, I
D
= −0.3 A 104 160
Forward Transconductance G
FS
V
DS
= −5.0 V, I
D
= −1.3 A 5.2 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −20 V
603 840
pF
Output Capacitance C
OSS
90 125
Reverse Transfer Capacitance C
RSS
62 85
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −4.5 V,
I
D
= −1.0 A
6.4 9.0
nC
Threshold Gate Charge Q
G(TH)
0.7
Gate−to−Source Charge Q
GS
1.0
Gate−to−Drain Charge Q
GD
1.5
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −4.0 V,
I
D
= −1.0 A, R
G
= 6.2 W
6.2 12
ns
Rise Time t
r
14.9 25
Turn−Off Delay Time t
d(OFF)
26 40
Fall Time t
f
18 30
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −0.3 A
T
J
= 25°C −0.61 −1.2
V
T
J
= 125°C −0.5
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
SD
/dt = 100 A/ms,
I
S
= −1.0 A
10.9 20
ns
Charge Time T
a
7.1
Discharge Time T
b
3.8
Reverse Recovery Charge Q
RR
4.25 nC
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTS4101P
http://onsemi.com
3
TYPICAL CHARACTERISTICS
0
1
2
3
4
02468
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
V
GS
= −4.5 V
−3.0 V
−2.2 V
−2.0 V
−1.8 V
−1.6 V
−1.4 V
−1.0 V
−3.5 V
−1.2 V
T
J
= 25°C
Figure 1. On−Region Characteristics
01 3 5
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
Figure 3. On−Resistance versus Drain Current
and Temperature
−I
D
, DRAIN CURRENT (A)
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
Figure 4. On−Resistance versus Drain Current
and Temperature
0.7
0.9
1.1
1.3
1.5
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 6. Capacitance Variation
0
1
2
3
4
5
6
0 0.4 0.8 1.2 2.4
T
J
= −55°C
T
J
= 25°C
T
J
= 125°C
V
DS
w −10 V
I
D
= −1.0 A
V
GS
= −4.5 V
0.16
0.12
0.08
0.04
0
−I
D
, DRAIN CURRENT (A)
246
5
6
1.6 2.0
V
GS
= −4.5 V
1000
04 8121620
−DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
T
J
= 25°C
V
GS
= 0 V
C
ISS
C
OSS
C
RSS
600
400
200
0
800
T
J
= 125°C
T
J
= −55°C
01 3 5
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
−I
D
, DRAIN CURRENT (A)
T
J
= 25°C
0.16
0.12
0.08
0.04
0
246
V
GS
= −3.6 V
T
J
= 125°C
T
J
= −55°C
−2.5 V
P1-P3P4-P5

NTS4101PT1G

Mfr. #:
Buy NTS4101PT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET -20V -1.37A P-Channel
Lifecycle:
New from this manufacturer.
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