APT40GP90BG

050-7479 Rev A 5-2004
APT40GP90B
TYPICAL PERFORMANCE CURVES
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss SSOA Rated
Low Gate Charge
Ultrafast Tail Current shutoff
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN TYP MAX
900
3 4.5 6
3.2 3.9
2.7
250
1000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250µA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
µA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT40GP90B
900
±20
±30
100
50
160
160A @ 900V
543
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
7
@ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
POWER MOS 7
®
IGBT
APT40GP90B
900V
050-7479 Rev A 5-2004
APT40GP90B
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 450V
I
C
= 40A
T
J
= 150°C, R
G
= 5Ω, V
GE
=
15V, L = 100µH,V
CE
= 900V
Inductive Switching (25°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 40A
R
G
= 5
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 40A
R
G
= 5
T
J
= +125°C
MIN TYP MAX
3300
325
35
7.5
145
22
55
160
16
27
75
60
TBD
1415
825
16
27
110
105
TBD
2370
1505
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
UNIT
°C/W
gm
MIN TYP MAX
.23
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
ΘJC
R
ΘJC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
55
Turn-off Switching Energy
66
050-7479 Rev A 5-2004
APT40GP90B
TYPICAL PERFORMANCE CURVES
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V) V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V) FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V) T
J
, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C) T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V) I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A) V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V) V
GE
, GATE-TO-EMITTER VOLTAGE (V) I
C
, COLLECTOR CURRENT (A)
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
= 720V
V
CE
= 450V
V
CE
= 180V
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 25°C
T
J
= -55°C
T
J
= 125°C
250µs PULSE TEST
<0.5 % DUTY CYCLE
T
C
= -50°C
T
C
= 125°C
V
GE
= 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
T
C
= 25°C
T
C
= 125°C
T
C
= -50°C
T
C
= 25°C
Package limited
160
140
120
100
80
60
40
20
0
200
180
160
140
120
100
80
60
40
20
0
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
I
C
= 40A
T
J
= 25°C
I
C
= 80A
I
C
= 20A
I
C
= 40A
I
C
= 20A
I
C
= 40A
I
C
= 80A
0123 456 0123456
0 2 4 6 8 10 0 20 40 60 80 100 120 140 160
6 8 10 12 14 16 -55 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
5
4
3
2
1
0
140
120
100
80
60
40
20
0

APT40GP90BG

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT, 900V, 40A, TO-247, RoHS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet