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NCL30000DR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
NCL30000
http://onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 3. Overvoltage Detect Threshold vs.
Junction Temperature
Figure 4. Overvoltage Hysteresis vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (C) T
J
, JUNCTION TEMPERATURE (C)
1007550250−25−50
105
106
107
10075250−25−50
40
50
60
70
80
V
OVP
/V
REF
, OVERVOLTAGE DETECT
THRESHOLD (%)
V
OVP(HYS)
, OVERVOLTAGE HYSTER-
ESIS (mV)
125
Figure 5. Undervoltage Detect Threshold vs.
Junction Temperature
Figure 6. MFP Pin Internal Pull−Down Resistor
vs. Junction Temperature
T
J
, JUNCTION TEMPERATURE (C) T
J
, JUNCTION TEMPERATURE (C)
1251007550250−25−50
0.300
0.305
0.315
0.320
0.325
1251007550250−25−50
0
1
2
6
7
V
UVP
, UNDERVOLTAGE DETECT THRESHOLD (V)
R
MFP
, FEEDBACK PIN INTERNAL PULL−
DOWN RESISTOR (MW)
0.310
Figure 7. Reference Voltage vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (C)
1251007550250−25−50
2.46
2.47
2.48
2.49
2.50
2.52
2.53
2.54
V
REF
, REFERENCE VOLTAGE (V)
50 125
3
4
5
2.51
NCL30000
http://onsemi.com
8
TYPICAL CHARACTERISTICS
Figure 8. Error Amplifier Sink Current vs.
Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
1251007550250−25−50
6
8
10
12
14
16
I
EA(sink)
, ERROR AMPLIFIER SINK
CURRENT (mA)
V
MFP
= 2.6 V
T
J
, JUNCTION TEMPERATURE (C) f, FREQUENCY (kHz)
1251007550250−25−50
85
90
95
105
110
120
125
1001010.10.01
200
0
20
60
100
140
160
T
J
, JUNCTION TEMPERATURE (C) T
J
, JUNCTION TEMPERATURE (C)
12510075250−25−50
0.3
0.4
0.5
0.7
0.8
1.0
1251007550250−25−50
264
266
270
274
278
gm, ERROR AMPLIFIER TRANSCONDUCTANCE (mS)
gm, ERROR AMPLIFIER TRANSCONDUCTANCE (mS)
Ct
(offset)
, MINIMUM CONTROL VOLTAGE
TO GENERATE DRIVE PULSES (V)
I
charge
, Ct CHARGE CURRENT (mA)
1000
50
Figure 9. Error Amplifier Source Current vs.
Junction Temperature
180
185
190
195
200
205
215
220
−50 −25 0 25 50 75 100 125
T
J
, JUNCTION TEMPERATURE (C)
I
EA(source)
, ERROR AMPLIFIER
SOURCE CURRENT (mA)
Figure 10. Error Amplifier Transconductance
vs. Junction Temperature
Figure 11. Error Amplifier Transconductance
and Phase vs. Frequency
Figure 12. Minimum Control Voltage to Generate
Drive Pulses vs. Junction Temperature
Figure 13. On Time Capacitor Charge Current
vs. Junction Temperature
V
MFP
= 0.5 V
210
100
115
40
80
120
180
Phase
Transconductance
R
Control
= 100 kW
C
Control
= 2 pF
V
MFP
= 2.5 Vdc, 1 Vac
V
CC
= 12 V
T
A
= 25C
200
0
20
60
100
140
160
40
80
120
180
q, PHASE (DEGREES)
0.6
0.9
268
272
276
NCL30000
http://onsemi.com
9
TYPICAL CHARACTERISTICS
Figure 14. Ct Peak Voltage vs. Junction
Temperature
Figure 15. PWM Propagation Delay vs.
Junction Temperature
T
J
, JUNCTION TEMPERATURE (C) T
J
, JUNCTION TEMPERATURE (C)
1007550250−25−50
4.0
4.5
5.0
5.5
6.0
100
110
120
130
140
150
160
170
Figure 16. Current Sense Voltage Threshold
vs. Junction Temperature
Figure 17. Leading Edge Blanking Duration vs.
Junction Temperature
T
J
, JUNCTION TEMPERATURE (C) T
J
, JUNCTION TEMPERATURE (C)
1251007550250−25−50
0.480
0.485
0.490
0.495
0.500
0.505
0.515
0.520
180
190
200
210
220
Figure 18. Maximum Off Time in Absence of
ZCD Transition vs. Junction Temperature
Figure 19. Drive Resistance vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (C) T
J
, JUNCTION TEMPERATURE (C)
1251007550250−25−50
165
170
175
180
190
195
200
205
1251007550250−25−50
0
2
4
8
10
14
16
18
V
Ct(MAX)
, Ct PEAK VOLTAGE (V)
t
PWM
, PWM PROPAGATION DELAY (ns)
V
ILIM
, CURRENT SENSE VOLTAGE THRESHOLD (V)
t
LEB
, LEADING EDGE BLANKING
DURATION (ns)
t
start
, MAXIMUM OFF TIME IN AB-
SENCE OF ZCD TRANSITION (ms)
DRIVE RESISTANCE (W)
125 1007550250−25−50 125
0.510
1251007550250−25−50
185
6
12
R
OH
R
OL
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

NCL30000DR2G

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Buy NCL30000DR2G
Manufacturer:
ON Semiconductor
Description:
LED Lighting Drivers PFC Dimmable LED Driver
Lifecycle:
New from this manufacturer.
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