AMMP-6532-TR2G

AMMP-6532
20-32 GHz GaAs MMIC LNA/IRM Receiver
in SMT Package
Data Sheet
Description
Avago Technologies AMMP-6532 is an easy-to-use
broadband integrated receiver in a surface mount
package. The MMIC includes a 4, -stage LNA to provide
gain amplication and a gate-pumped image-reject
mixer for frequency translation. The overall receiver
performs Single Side Band down-conversion in the 20
to 32 GHz RF signal range. The LO and RF are matched to
50Ω. The IF output is provided in 2-port format where an
external 90-degree hybrid can be utilized for full image
rejection. The LNA requires a 3V, 83mA power supply,
where the mixer bias is a simple –1V, 0.1mA. The MMIC is
fabricated using PHEMT technology. The surface mount
package allows elimination of chip & wire assembly for
lower cost. This MMIC is a cost eective alternative to
multi-chip solution that have higher loss and complex
assembly.
Package Diagram
Note:
1. This MMIC uses depletion mode pHEMT devices.
2. Negative supply is used for mixer bias.
Features
• Surface Mount Package (5.0 x 5.0 x 1.25 mm)
• Integrated Low Noise Amplier
• Integrated Image Reject Mixer
• 50 Ω Input and Output Match
• Single Supply Bias Pin
Specications Vd=3.0V (83mA), Vg=-1.0V (0.1mA)
• RF Frequency: 20 to 32 GHz
• IF frequency: 1 to 5 GHz
• Conversion Gain (RF/IF): 13dB
• Input Intercept Point: -4dBm
•Image Supression: > 15 db
•Total Noise Figure: 3 dB
Applications
• Microwave Radio systems
• Satellite VSAT, DBS Up/Down Link
• LMDS & Pt-Pt mmW Long Haul
• Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
• WLL and MMDS loops
Functional Block Diagram
Attention: Observe Precautions for
handling electrostatic sensitive devices.
ESD Machine Mode (Class A): 50V
(Class 0): 150V
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
RF
IF1 NC IF2
Vd NC Vg
LO
1 2 3
7 56
4
8
Top view
Package base: GND
1 2 3
4
5
67
8
Pin Function
1
IF1
2 NC
3 IF2
4 LO
5 Vg
6
NC
7 Vd
8 RF
Note: MSL Rating = Level 2A
2
Electrical Specications
1. Small/Large -signal data measured in a fully de-embedded test xture form TA = 25°C.
2. Pre-assembly into package performance veried 100% on-wafer.
3. This nal package part performance is veried by a functional test correlated to actual performance at one or more
frequencies.
4. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Гopt) matching.
5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.
Table 1. RF Electrical Characteristics
TA=25°C, Vd=3.0V, Vg=-1V,Idq=83mA Zo=50 Ω, LO=+15dBm, IF=2GHz
Parameter
RF=22GHz, LO=24GHz RF=30GHz, LO=32GHz
Unit CommentMin Typ Max Min Typ Max
Noise Figure into 50 Ω, NF 3 4.5 3 4.5 dB
Conversion Gain, CG 10 13 10 13 dB
Input Third Order Intercept, IIP3 -5 -4 -5 -4 dBm
Image Rejection, Sup 15 15 dB
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description Min. Typical Max. Unit Comments
Drain Supply Current, Id 60 90 mA Vd = 4.0 V
Drain Supply Voltage, Vd 3 5 V
Gate Supply Voltage, Vg -1.0 V Ig = 0.1mA
RF Frequency, RFfreq 20 32 GHz
LO Frequency, LOfreq 18 34 GHz
IF Frequency, IFfreq 1 3.5 GHz
LO Drive Power, LO +10 +15 +22 dBm
3
Table 3. Thermal Properties
Parameter Test Conditions Value
Thermal Resistance, qjc
Ambient operational temperature TA = 25°C
Channel-to-backside Thermal Resistance Tchannel(Tc)=34°C
Thermal Resistance at backside temperature Tb=25°C
qjc = 27 °C/W
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description Pin Min. Max. Unit Comments
Drain to Ground Supply Voltage, Vd 5.5 V
Gate to Ground Voltage, Vg +0.8 V
Drain Current , Id 100 mA
Gate Current, Ig 1 mA
RF CW Input Power, Pin 10 dB
Channel Temperature, Tch +150 °C
Storage Temperature, Tstg -65 +150 °C
Maximum Assembly Temperature, Tmax 360 °C 60 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.

AMMP-6532-TR2G

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
RF Wireless Misc LNA IR Mixer 20-33GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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