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RoHS Compliant
• 125 Watts
• DC – 4.0 GHz
• AlN Ceramic
• Non-Nichrome Resistive
Element
• Low VSWR
•
100% Tested
The A125N50X4 is high performance Aluminum Nitride (AlN) chip termination
intended as an alternative to Beryllium Oxide (BeO). The termination is well
suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS
and UMTS. The high power handling makes the part ideal for terminating
circulators and for use in power combiners. The termination is also RoHS
compliant!
Resistive Element
Thick film
Substrate
AlN Ceramic
Terminal Finish
Matte Tin over Nickel Barrier
Operating Temperature
-50 to +150°C (see de rating chart)
Tolerance is
0.010”, unless otherwise specified. Designed to meet or exceed
applicable portions of MIL-E-5400. All dimensions in inches.
Electrical Specifications
Resistance Value:
50 Ohms, ± 2%
Power:
125 Watts
Frequency Range:
DC – 4.0 GHz
Return Loss
> 26 dB to 1.3 GHz
> 22 dB to 4.0GHz
Specification based on unit properly installed using suggested mounting instructions
and a 50 ohm nominal impedance. Specifications subject to change.
UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES
1 of 2
Chip Termination
125 Watts, 50
Ω
ΩΩ
Ω
