Characteristics STPS30SM80C
4/11 Doc ID 018727 Rev 1
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 7. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
0
20
40
60
80
100
120
140
160
180
1.E-03 1.E-02 1.E-01 1.E+00
TO-220AB / I PAK / D PAK
22
I
M
t
δ = 0.5
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
I (A)
M
t(s)
0
10
20
30
40
50
60
70
80
90
100
110
1.E-03 1.E-02 1.E-01 1.E+00
TO-220FPAB
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
I
M
t
δ = 0.5
I (A)
M
t(s)
Figure 8. Relative thermal impedance
junction to case versus pulse
duration
Figure 9. Relative thermal impedance
junction to case versus pulse
duration (TO-220FPAB)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
TO-220AB / I PAK / D PAK
22
Z/R
th(j-c) th(j-c)
t (s)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Single pulse
Z/R
th(j-c) th(j-c)
t (s)
p
TO-220FPAB
Figure 10. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0 1020304050607080
I (µA)
R
V (V)
R
T = 25 °C
j
T = 50 °C
j
T = 75 °C
j
T = 125 °C
j
T = 150 °C
j
T = 100 °C
j
100
1000
1 10 100
F = 1 MHz
V = 30 mV
T = 25 °C
osc RMS
j
C(pF)
V (V)
R
