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LTC3586EUFE#TRPBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36
LTC3586/LTC3586-1
4
3586fb
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
BUS
= 5V, BAT = 3.8V, V
IN1
= V
IN2
= V
IN3
= V
IN4
= V
OUT3
= 3.8V,
V
OUT4
= 5V, R
PROG
= 1k, R
CLPROG
= 3.01k, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
R
ON_CHG
Battery Charger Power FET
On-Resistance (Between V
OUT
and BAT)
0.18 Ω
T
LIM
Junction Temperature in Constant
Temperature Mode
110 °C
NTC
V
COLD
Cold Temperature Fault Threshold
Voltage
Rising Threshold
Hysteresis
75.0 76.5
1.5
78.0 %V
BUS
%V
BUS
V
HOT
Hot Temperature Fault Threshold
Voltage
Falling Threshold
Hysteresis
33.4 34.9
1.73
36.4 %V
BUS
%V
BUS
V
DIS
NTC Disable Threshold Voltage Falling Threshold
Hysteresis
0.7 1.7
50
2.7 %V
BUS
mV
I
NTC
NTC Leakage Current V
NTC
= V
BUS
= 5V –50 50 nA
Ideal Diode
V
FWD
Forward Voltage V
BUS
= 0V, I
VOUT
= 10mA
I
VOUT
= 10mA
2
15
mV
mV
R
DROPOUT
Internal Diode On-Resistance, Dropout V
BUS
= 0V 0.18 Ω
I
MAX_DIODE
Internal Diode Current Limit 1.6 A
Always On 3.3V Supply
V
LDO3V3
Regulated Output Voltage 0mA < I
LDO3V3
< 20mA 3.1 3.3 3.5 V
R
CL_LDO3V3
Closed-Loop Output Resistance 4 Ω
R
OL_LDO3V3
Dropout Output Resistance 23 Ω
Logic Input (EN1, EN2, EN3, EN4, MODE, ILIM0, ILIM1, FAULT)
V
IL
Logic Low Input Voltage 0.4 V
V
IH
Logic High Input Voltage 1.2 V
I
PD
Pull-Down Current 1 µA
FAULT Output
V
FAULT
FAULT Pin Output Low Voltage I
FAULT
= 5mA 65 100 mV
FAULT Delay 14 ms
FBx Voltage Threshold
for FAULT (x = 1, 2, 3, 4)
0.736 V
Switching Regulators 1, 2, 3 and 4
V
IN1,2,3,4
Input Supply Voltage 2.7 5.5 V
V
OUTUVLO
V
OUT
UVLO—V
OUT
Falling
V
OUT
UVLO—V
OUT
Rising
V
IN1,2,3,4
Connected to V
OUT
Through
Low Impedance. Switching Regulators
are Disabled in UVLO
2.5 2.6
2.8
2.9
V
V
f
OSC
Oscillator Frequency 1.8 2.25 2.7 MHz
I
FB1,2,3,4
FBx Input Current V
FB1,2,3,4
= 0.85V –50 50 nA
V
FB1,2,3,4
V
FBx
Servo Voltage
l
0.78 0.80 0.82 V
LTC3586/LTC3586-1
5
3586fb
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
BUS
= 5V, BAT = 3.8V, V
IN1
= V
IN2
= V
IN3
= V
IN4
= V
OUT3
= 3.8V,
V
OUT4
= 5V, R
PROG
= 1k, R
CLPROG
= 3.01k, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Switching Regulators 1 and 2 (Buck)
I
VIN1,2
Pulse-Skip Mode Input Current
Burst Mode
®
Input Current
Shutdown Input Current
I
VOUT1,2
= 0µA, (Note 7)
I
VOUT1,2
= 0µA, (Note 7)
I
VOUT1,2
= 0µA, (Note 7)
225
35
60
1
µA
µA
µA
I
LIM1,2
PMOS Switch Current Limit Pulse-Skip/Burst Mode Operation (Note 5) 600 800 1100 mA
R
P1,2
PMOS R
DS(ON)
0.6 Ω
R
N1,2
NMOS R
DS(ON)
0.7 Ω
D
1,2
Maximum Duty Cycle 100 %
R
SW1,2
SW1,2 Pull-Down in Shutdown 10 kΩ
Switching Regulator 3 (Buck-Boost)
I
VIN3
Input Current PWM Mode, I
VOUT3
= 0µA
Burst Mode Operation, I
VOUT3
= 0µA
Shutdown
220
13
0
400
20
1
µA
µA
µA
V
OUT3(LOW)
Minimum Regulated Output Voltage For Burst Mode Operation or PWM Mode 2.65 2.75 V
V
OUT3(HIGH)
Maximum Regulated Output Voltage 5.5 5.6 V
I
LIMF3
Forward Current Limit (Switch A) PWM Mode (Note 5)
l
2 2.5 3 A
I
PEAK3(BURST)
Forward Burst Current Limit (Switch A) Burst Mode Operation
l
200 275 350 mA
I
ZERO3(BURST)
Reverse Burst Current Limit (Switch D) Burst Mode Operation
l
–30 0 30 mA
I
MAX3(BURST)
Maximum Deliverable Output Current in
Burst Mode Operation
2.7V ≤ V
IN3
≤ 5.5V, 2.75V ≤ V
OUT3
≤ 5.5V
(Note 8)
50 mA
R
DS(ON)P
PMOS R
DS(ON)
Switches A, D 0.22 Ω
R
DS(ON)N
NMOS R
DS(ON)
Switches B, C 0.17 Ω
I
LEAK(P)
PMOS Switch Leakage Switches A, D –1 1 µA
I
LEAK(N)
NMOS Switch Leakage Switches B, C –1 1 µA
R
VOUT3
V
OUT3
Pull-Down in Shutdown 10 kΩ
D
BUCK(MAX)
Maximum Buck Duty Cycle PWM Mode
l
100 %
D
BOOST(MAX)
Maximum Boost Duty Cycle PWM Mode 75 %
t
SS3
Soft-Start Time 0.5 ms
Switching Regulator 4 (Boost)
I
VIN4
Input Current FB4 > 0.8V, I
VOUT4
= 0µA
Shutdown, V
OUT4
= 0V
180
1
µA
µA
I
VOUT4
Q-Current Drawn from Boost Output FB4 = 0V 7.5 mA
I
LIMF4
NMOS Switch Current Limit (Note 5) 2000 2800 mA
V
OUT4
Output Voltage Adjust Range 5 V
V
OV4
Overvoltage Shutdown 5.1 5.3 5.5 V
∆V
OV4
Overvoltage Shutdown Hysteresis 0.3 V
Burst Mode is a registered trademark of Linear Technology Corporation.
LTC3586/LTC3586-1
6
3586fb
Ideal Diode V-I Characteristics
Ideal Diode Resistance
vs Battery Voltage
Output Voltage vs Output Current
(Battery Charger Disabled)
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
BUS
= 5V, BAT = 3.8V, V
IN1
= V
IN2
= V
IN3
= V
IN4
= V
OUT3
= 3.8V,
V
OUT4
= 5V, R
PROG
= 1k, R
CLPROG
= 3.01k, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
R
DS(ON)P4
PMOS R
DS(ON)
Synchronous Switch 0.25 Ω
R
DS(ON)N4
NMOS R
DS(ON)
Main Switch 0.17 Ω
I
LEAK(P)4
PMOS Switch Leakage Synchronous Switch –1 1 µA
I
LEAK(N)4
NMOS Switch Leakage Main Switch –1 1 µA
R
VOUT4
V
OUT4
Pull-Down in Shutdown 10 kΩ
D
BOOST(MAX)
Maximum Boost Duty Cycle 91 94 %
t
SS4
Soft-Start Time 0.375 ms
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3586E/LTC3586E-1 are guaranteed to meet performance
specifications from 0°C to 85°C. Specifications over the –40°C to 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 3: The LTC3586E/LTC3586E-1 include overtemperature protection
that is intended to protect the device during momentary overload
conditions. Junction temperature will exceed 125°C when overtemperature
protection is active. Continuous operation above the specified maximum
operating junction temperature may impair device reliability.
Note 4: Total input current is the sum of quiescent current, I
VBUSQ
, and
measured current given by:
V
CLPROG
/R
CLPROG
• (h
CLPROG
+1)
Note 5: The current limit features of this part are intended to protect the
IC from short term or intermittent fault conditions. Continuous operation
above the maximum speci
fied pin current rating may result in device
degradation or failure.
Note 6: h
C/10
is expressed as a fraction of measured full charge current
with indicated PROG resistor.
Note 7: FBx above regulation such that regulator is in sleep. Speci
fication
does not include resistive divider current reflected back to V
INX
.
Note 8: Guaranteed by design.
FORWARD VOLTAGE (V)
0
CURRENT (A)
0.6
0.8
1.0
0.16
3586 G01
0.4
0.2
0
0.04
0.08
0.12
0.20
INTERNAL IDEAL DIODE
WITH SUPPLEMENTAL
EXTERNAL VISHAY
Si2333 PMOS
INTERNAL IDEAL
DIODE ONLY
V
BUS
= 0V
V
BUS
= 5V
BATTERY VOLTAGE (V)
2.7
RESISTANCE (Ω)
0.15
0.20
0.25
3.9
3586 G02
0.10
0.05
0
3.0
3.3
3.6
4.2
INTERNAL IDEAL DIODE
WITH SUPPLEMENTAL
EXTERNAL VISHAY
Si2333 PMOS
INTERNAL IDEAL DIODE
Typical perForMance characTerisTic
(T
A
= 25°C unless otherwise noted)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36

LTC3586EUFE#TRPBF

Mfr. #:
Buy LTC3586EUFE#TRPBF
Manufacturer:
Analog Devices / Linear Technology
Description:
Battery Management High Efficiency USB Power Manager + Dual Buck + Boost + Buck/Boost DC/DC
Lifecycle:
New from this manufacturer.
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