PS12018-A Datasheet PS12018-A | P1-P3

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS12018-A

FLAT-BASE TYPE

INSULATED TYPE

Jan. 2000

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

LABEL

115 ± 1

8.5

1010

15.5 15.5

2.5

105

± 0.5

63.5 ± 0.8 17.5

(102)

(22)

0.5

✽ 3

12.7

± 0.3

76 ± 1

41 ± 0.5

2 ± 0.3

56 ± 0.8

20.4

± 1

17 ± 0.8

60 ± 0.5

63 ± 0.8

1 ± 0.3

15.5

± 0.3

4-φ5

4-R2

4-R5

4-φ4.5

4-φ3.2

MOUNTING

HOLE

31 36

1 CBU+

2 CBU–

3 CBV+

4 CBV–

5 CBW+

6 CBW–

7 GND

8 VDL

9 VDH

10 CL

11 FO1

12 FO2

13 FO3

14 CU

15 CV

16 CW

17 UP

18 VP

19 WP

20 UN

21 VN

22 WN

23 Br

31 P

32 B

33 N

34 U

35 V

36 W

Terminals Assignment:

PS12018-A

PACKAGE OUTLINES

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS12018-A

FLAT-BASE TYPE

INSULATED TYPE

(Fig. 1)

INTEGRATED FUNCTIONS AND FEATURES

• 3-Phase IGBT inverter bridge configured by the latest 3rd.

generation IGBT and diode technologies.

• Circuit for dynamic braking of motor regenerative energy.

• Inverter output current capability Io (Note 1) :

APPLICATION

Acoustic noise-less 3.7kW/AC400V Class 3 Phase inverter and other motor control applica-

tions.

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:

• For P-Side IGBTs : Drive circuit, High-speed photo-couplers, Short circuit protection (SC),

Bootstrap circuit supply scheme (Single drive power supply ) and Under-voltage protection (UV).

• For N-Side IGBTs : Drive circuit, Short-circuit protection (SC), Control supply Under voltage and Over voltage protection (OV/UV),

System Over temperature protection (OT), Fault output signaling circuit (Fo), and Current-Limit warning signal out-

put (CL).

• For Brake circuit IGBT : Drive circuit.

• Warning and Fault signaling :

O1 : Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.

O2 : N-side control supply abnormality locking (OV/UV)

O3 : System over-temperature protection (OT).

CL : Warning for inverter current overload condition

• For system feedback control : Analogue signal feedback reproducing actual inverter output phase current (3φ).

• Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.

Type Name

PS12018-A

100% load

9.2A (rms)

150% over load

13.8A (rms), 1min

(Note 1) : The inverter output current is assumed to be sinu-

soidal and the peak current value of each of the

above loading cases is defined as : Iop = Io ✕ √2

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS12018-A

FLAT-BASE TYPE

INSULATED TYPE

Jan. 2000

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

CBU–

CBU+

CBV–

CBV+

CBW–

CBW+

GND VDL VDH

Fo Logic

Application Specific Intelligent

Power Module

CU CV CW

CL,FO

,FO

Protection

Circuit

Photo

Coupler

Input Circuit

Drive Circuit

Input signal conditioning

Current sensing

circuit

Protection

circuit

Control supply

fault sense

Z : Surge absorber.

C : AC filter (Ceramic condenser 2.2~6.5nF)

[Note : Additionally an appropriate Line-to line

surge absorber circuit may become necessary

depending on the application environment].

AC 400V

line output

Brake resistor connection,

AC 400V line input

Inrush prevention circuit,

etc.

Analogue signal output corresponding to

each phase current (5V line) Note 1)

PWM input

(5V line) Note 2)

Note 1) To prevent chances of signal oscillation, a series resistor (1kΩ) coupling at each output is recommended.

Note 2) By virtue of integrating a photo-coupler inside the module, direct coupling to CPU, without any extemal opto or transformer isolation is possible.

Note 3) All outputs are open collector type. Each signal line should be pulled up to plus side of the 5V power supply with approximately 5.1kΩ resistance.

Note 4) The wiring between power DC link capacitor and P/N terminals should be as short as possible to protect the ASIPM against catastrophic high surge voltage.

For extra precaution, a small film snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P and N DC power input pins.

Fault output

(5V line) Note 3)

INTERNAL FUNCTIONS BLOCK DIAGRAM

(Fig. 2)

±Ic(±Icp)

Ic(Icp)

F(IFP)

900

1000

1200

Applied between P-N

Applied between P-N, Surge-value

Applied between P-U, V, W, Br or U, V, W, Br-N

Supply voltage

Supply voltage (surge)

Each output IGBT collector-emitter static voltage

ConditionSymbol Item Ratings Unit

VCC

VCC(surge)

VP or VN

MAXIMUM RATINGS (Tj = 25°C)

INVERTER PART (Including Brake Part)

VP(S) or

N(S)

Each output IGBT collector-emitter surge voltage

Each output IGBT collector current

Brake IGBT collector current

Brake diode anode current

Applied between P-U, V, W, Br or U, V, W, Br-N

TC = 25°C

Note : “( )” means I

C peak value

1200

±25 (±50)

10 (20)

CIN

VFO

IFO

VCL

ICL

ICO

V7Applied between VDL-GND

Supply voltage

VDL

Symbol Item Ratings Unit

CONTROL PART

Condition

Input signal voltage

Fault output supply voltage

Fault output current

Current-limit warning output voltage

CL output current

Analogue-current-signal output current

–0.5 ~ VDL+0.5 V

Applied between U

P · VP · WP · UN · VN ·

N · Br-GND

Applied between F

O1 · FO2 · FO3-GND

Sink current of F

O1 · FO2 · FO3

Applied between CL-GND

Sink current of CL

Sink current of CU · CV · CW

–0.5 ~ 7

±1

DH, VDB Supply voltage V20

Applied between V

DH-GND, CBU+-CBU–,

BV+-CBV–, CBW+-CBW–

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS12018-A

FLAT-BASE TYPE

INSULATED TYPE

Jan. 2000

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

LABEL

ConditionSymbol

Item

Ratings Unit

(Note 2)

—

(Fig. 3)

60 Hz sinusoidal AC for 1 minute, between all terminals

and base plate.

Mounting screw: M4.0

Tstg

VISO

—

Junction temperature

Storage temperature

Module case operating temperature

Isolation voltage

Mounting torque

–20 ~ +125

–40 ~ +125

–20 ~ +100

2500

0.98 ~ 1.47

°C

Vrms

N·m

TOTAL SYSTEM

Note 2) : The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation.

However, these power elements can endure instantaneous junction temperature as high as 150°C. To make use of this additional

temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is

to be provided before use.

CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)

°C/W

—

Inverter IGBT (1/6)

Inverter FWDi (1/6)

Brake IGBT

Brake FWDi

Case to fin, thermal grease applied (1 Module)

Junction to case Thermal

Resistance

Contact Thermal Resistance

th(jc)Q

Rth(jc)F

Rth(jc)QB

Rth(jc)FB

Rth(c-f)

ConditionSymbol Item

Ratings

Min.

THERMAL RESISTANCE

Typ. Max.

—

1.6

3.0

2.9

5.5

0.031

Unit

kΩ

150

2.0

4.0

—

1.4

3.0

150

—

0.8

2.5

—

DH Circuit Current

DL Circuit Current

Input on threshold voltage

Input off threshold voltage

Input pull-up resistor

Min.

µs

3.5

2.5

1.5

4.0

1.6

—

1.4

0.60

2.2

0.9

0.2

IDL

Vth(on)

Vth(off)

VCC ≤ 800V, Input = ON (One-Shot)

Tj = 125°C start

13.5V ≤ V

DH = VDB = ≤ 16.5V, VDL = 5V

CC ≤ 800V, Tj ≤ 125°C,

Ic < I

OL(CL) operation level, Input = ON,

13.5V ≤ V

DH = VDB = ≤ 16.5V, VDL = 5V

FBr

ton

tc(on)

toff

tc(off)

trr

CE(sat)

VEC

VDL = 5V, VDH = VDB = 15V Input = ON,

Tj = 25°C, Ic = 25A

Tj = 25°C, Ic = –25A, Input = OFF

Condition

Symbol Item

Ratings

Typ. Max.

—

Unit

• No destruction

• F

O output by protection operation

ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V , VDB = 15V, VDL = 5V unless otherwise noted)

Collector-emitter saturation

voltage

FWDi forward voltage

Brake IGBT

Collector-emitter saturation voltage

Brake diode forward voltage

CE(sat)Br

Tj = 25°C, IF = 10A, Input = OFF

DL = 5V, VDH = 15V Input = ON, Tj = 25°C, Ic = 10A

Switching times

FWD reverse recovery time

1/2 Bridge inductive, Input = ON

CC = 600V, Ic = 25A, Tj = 125°C

DL = 5V, VDH = 15V, VDB = 15V

Note : ton, toff include delay time of the internal control

circuit.

Short circuit endurance

(Output, Arm, and Load, Short

Circuit Modes)

Switching SOA

VDL = 5V, VDH = 15V, VCIN = 5V

DL = 5V, VDH = 15V, VCIN = 5V

—

0.40

—

3.6

3.5

3.6

• No destruction

• No protecting operation

• No F

O output

Integrated between input terminal-VDH

(Fig. 3)

P1-P3 P4-P6

PS12018-A

Mfr. #:

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MOD IPM 3PHASE IGBT 1200V 25A

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PS12018-A