I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
2
R05
CPC1001N
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Absolute Maximum Ratings @ 25ºC
Parameter Ratings Units
Input Power Dissipation
1
150 mW
Input Control Current
Peak (10ms)
5mA
1A
Reverse Input Voltage 5 V
Phototransistor
2
150 mW
Isolation Voltage, Input to Output 1500 V
rms
Operational Temperature -40 to +85 °C
Storage Temperature -40 to +125 °C
1
Derate linearly 1.33 mW / ºC
2
Derate linearly 2.00 mW / ºC
Electrical Characteristics @ 25ºC
Characteristic Symbol Test Condition Typ Units
Turn-On Time t
on
I
F
=2mA, V
CC
=5V, R
L
=1K
1
s
Turn-Off Time t
off
30
Switching Characteristics @ 25ºC
Parameters Conditions Symbol Min Typ Max Units
Output Characteristics
Phototransistor Blocking Voltage I
CEO
=10µA BV
CEO
30 90 - V
P
Phototransistor Output (Dark) Current I
F
=0mA, V
CEO
=5V I
CEO
- 9 500 nA
Saturation Voltage I
F
=1mA, I
C
=1mA V
CE(sat)
- - 0.3 V
Current Transfer Ratio I
F
=0.2mA, V
CE
=0.5V CTR 100 330 800 %
Output Capacitance V
CEO
=25V, f=1MHz C
OUT
-6-pF
Input Characteristics
Input Control Current I
C
=0.2mA, V
CE
=0.5V I
F
- 0.1 0.2 mA
Input Voltage Drop I
F
=5mA V
F
0.9 1.2 1.4 V
Input Reverse Current V
R
=5V I
R
- - 10 µA
Common Characteristics
Input to Output Capacitance - C
I/O
-3-pF
Switching Time Test Circuit
V
CC
V
CE
R
L
I
F
Pulse Width=5ms
Duty Cycle=1%
I
F
10%
90%
t
ON
t
OFF
V
CE
