IXGK60N60 Datasheet IXGH60N60, IXGK60N60, IXGT60N60 | P1-P3

1 - 4

TO-247 AD (IXGH)

V

CES

= 600 V

I

C25

= 75 A

V

CE(sat)

= 1.7 V

G

C

E

G = Gate, C = Collector,

E = Emitter, TAB = Collector

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MW 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C, limited by leads 75 A

I

C90

T

C

= 90°C60A

I

CM

T

C

= 25°C, 1 ms 200 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 10 W I

CM

= 100 A

(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V

CES

P

C

T

C

= 25°C 300 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque (M3) 1.13/10 Nm/lb.in.

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Weight TO-247 6 g

TO-264 10 g

TO-268 4 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

I

C

= 250 mA, V

GE

= 0 V 600 V

V

GE(th)

I

C

= 250 m A, V

CE

= V

GE

2.5 5 V

I

CES

V

CE

= 0.8 • V

CES

T

J

= 25°C 200 mA

V

GE

= 0 V T

J

= 125°C1mA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= I

C90

, V

GE

= 15 V 1.7 V

Features

• International standard package

JEDEC TO-247 AD, TO-264, TO-268

• New generation HDMOS

TM

process

• Low V

CE(sat)

for minimum on-state

conduction losses

• High current handling capability

• MOS Gate turn-on drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

Advantages

• Easy to mount with 1 screw

(isolated mounting screw hole)

• Low losses, high efficiency

• High power density

• High power, surface mount package

92796L (7/00)

Ultra-Low V

CE(sat)

IGBT

TO-268

(IXGT)

(TAB)

G

E

TO-264 (IXGK)

S

G

D

D (TAB)

IXGH 60N60

IXGK 60N60

IXGT 60N60

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= I

C90

; V

CE

= 10 V, 30 55 S

Pulse test, t £ 300 ms, duty cycle £ 2 %

C

ies

3700 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 290 pF

C

res

86 pF

Q

g

130 nC

Q

ge

I

C

= I

C90

, V

GE

= 15 V, V

CE

= 0.5 V

CES

30 nC

Q

gc

45 nC

t

d(on)

50 ns

t

ri

25 ns

t

d(off)

300 600 ns

t

fi

360 570 ns

E

off

815mJ

t

d(on)

50 ns

t

ri

25 ns

E

on

3mJ

t

d(off)

650 ns

t

fi

550 ns

E

off

17 mJ

R

thJC

0.42 K/W

R

thCK

(IXGH) 0.25 K/W

(IXGK) 0.15 K/W

Inductive load, T

J

= 25°C

I

C

= I

C90

, V

GE

= 15 V, L = 100 mH,

V

CE

= 0.8 V

CES

, R

G

= R

off

= 2.7 W

Remarks: Switching times may increase

for V

CE

(Clamp) > 0.8 • V

CES

, higher T

J

or

increased R

G

Inductive load, T

J

= 125°C

I

C

= I

C90

, V

GE

= 15 V, L = 100 mH

V

CE

= 0.8 V

CES

, R

G

= R

off

= 2.7 W

Remarks: Switching times may increase

for V

CE

(Clamp) > 0.8 • V

CES

, higher T

J

or

increased R

G

IXGH 60N60 IXGK 60N60

IXGT 60N60

TO-247 AD (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800

B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640

D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216

F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084

H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209

M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

A

1

2.7 2.9 .106 .114

A

2

.02 .25 .001 .010

b 1.15 1.45 .045 .057

b

2

1.9 2.1 .75 .83

C .4 .65 .016 .026

D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

E

1

13.3 13.6 .524 .535

e 5.45 BSC .215 BSC

H 18.70 19.10 .736 .752

L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055

L2 1.00 1.15 .039 .045

L3 0.25 BSC .010 BSC

L4 3.80 4.10 .150 .161

TO-268AA (IXFT) (D

3

PAK)

Min. Recommended Footprint

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TO-264 AA (IXFK) Outline

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4

T

J

- Degrees C

-50-250 255075100125150

BV/V

GE(th)

- Normalized

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

T

J

- Degrees C

25 50 75 100 125 150

V

CE (sat)

- Normalized

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V

CE

- Volts

012345

I

C

- Amperes

0

10

20

30

40

50

60

70

80

90

100

V

CE

- Volts

01234

I

C

- Amperes

0

25

50

75

100

125

150

175

200

V

CE

- Volts

0 100 200 300 400 500 600

I

C

- Amperes

0.1

1

10

100

V

CE

- Volts

0246810

I

C

- Amperes

0

50

100

150

200

250

300

350

13V

11V

9V

7V

V

GE

= 15V

13V

11V

9V

7V

T

J

= 25°C

V

GE

= 15V

I

C

= 30A

I

C

= 60A

I

C

= 120A

V

GE(th)

I

C

= 250µA

BV

CES

I

C

= 250µA

T

J

= 125

o

C

T

J

= 25

o

C

V

GE

= 15V

T

J

= 25°C

V

GE

= 15V

T

J

= 125

o

C

R

G

= 4.7

dV/dt < 5V/ns

Fig. 4. Temperature Dependence of V

CE(sat)

Fig. 3. Saturation Voltage Characteristics

Fig. 5. Turn-off Safe Operating Area

Fig. 6. Temperature Dependence of

BV

CES

& V

GE(th)

Fig. 2. Extended Output CharacteristicsFig. 1. Saturation Voltage Characteristics

IXGH 60N60 IXGK 60N60

IXGT 60N60

IXGK60N60

IXGK60N60

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