SIR664DP-T1-GE3 Datasheet SIR664DP-T1-GE3 | P1-P3

Vishay Siliconix

SiR664DP

Document Number: 62849

S13-1160-Rev. A, 13-May-13

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Power MOSFET

•100 % R

g

and UIS Tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Primary Side Switching

• Synchronous Rectification

• DC/DC Converters

• Boost Converters

• DC/AC Inverters

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() Max.

I

D

(A)

Q

g

(Typ.)

60

0.0060 at V

GS

= 10 V

60

a

12 nC

0.0075 at V

GS

= 6 V

60

a

0.0095 at V

GS

= 4.5 V

54

Ordering Information:

SiR664DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK

®

SO-8

Bottom View

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

60

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

60

a

A

T

C

= 70 °C

54

T

A

= 25 °C

21.5

b, c

T

A

= 70 °C

17.2

b, c

Pulsed Drain Current (t = 100 µs)

I

DM

150

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

60

a

T

A

= 25 °C

4.5

b, c

Single Pulse Avalanche Current

L =0.1 mH

I

AS

20

Single Pulse Avalanche Energy

E

AS

20

mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

50

W

T

C

= 70 °C

32

T

A

= 25 °C

5

b, c

T

A

= 70 °C

3.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  10 s

R

thJA

20 25

°C/W

Maximum Junction-to-Case (Drain)

Steady State

R

thJC

22.5

Vishay Siliconix

SiR664DP

Document Number: 62849

S13-1160-Rev. A, 13-May-13

www.vishay.com

2

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

60 V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= 250 µA

103

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

- 5.5

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

1.3 2.5 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 60 V, V

GS

= 0 V

1

µA

V

DS

= 60 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

5 V, V

GS

= 10 V

30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 20 A

0.0050 0.0060



V

GS

= 6 V, I

D

= 15 A

0.0060 0.0075

V

GS

= 4.5 V, I

D

= 10 A

0.0073 0.0095

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 20 A

70 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= 30 V, V

GS

= 0 V, f = 1 MHz

1750

pFOutput Capacitance

C

oss

720

Reverse Transfer Capacitance

C

rss

60

Total Gate Charge

Q

g

V

DS

= 30 V, V

GS

= 10 V, I

D

= 10 A

26 40

nC

V

DS

= 30 V, V

GS

= 6 V, I

D

= 10 A

16 24

V

DS

= 30 V, V

GS

= 4.5 V, I

D

= 10 A

12 18

Gate-Source Charge

Q

gs

5

Gate-Drain Charge

Q

gd

3.2

Output Charge

Q

oss

V

DS

= 30 V, V

GS

= 0 V

29 45

Gate Resistance

R

g

f = 1 MHz 0.5 1.7 3 

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 30 V, R

L

= 3 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

10 20

ns

Rise Time

t

r

12 24

Turn-Off Delay Time

t

d(off)

24 48

Fall Time

t

f

714

Tur n - O n D e l ay T im e

t

d(on)

V

DD

= 30 V, R

L

= 3 

I

D

 10 A, V

GEN

= 4.5 V, R

g

= 1 

34 68

Rise Time

t

r

95 190

Turn-Off Delay Time

t

d(off)

20 40

Fall Time

t

f

816

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

60

A

Pulse Diode Forward Current (t

p

= 100 µs) I

SM

150

Body Diode Voltage

V

SD

I

S

= 5 A

0.76 1.1 V

Body Diode Reverse Recovery Time

t

rr

I

F

= 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

29 55 ns

Body Diode Reverse Recovery Charge

Q

rr

19 35 nC

Reverse Recovery Fall Time

t

a

14

ns

Reverse Recovery Rise Time

t

b

15

Vishay Siliconix

SiR664DP

Document Number: 62849

S13-1160-Rev. A, 13-May-13

www.vishay.com

3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

30

60

90

120

150

0 1 2 3 4 5

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 3 V

V

GS

= 2 V

V

GS

= 10 V thru 5 V

V

GS

= 4 V

0.0040

0.0050

0.0060

0.0070

0.0080

0.0090

0.0100

0 20 40 60 80 100

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 6.0 V

V

GS

= 10 V

0

2

4

6

8

10

0 6 12 18 24 30

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

DS

= 30 V

V

DS

= 40 V

V

DS

= 20 V

I

D

= 10 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

20

40

60

80

100

0.0 1.0 2.0 3.0 4.0 5.0

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25

°

C

T

C

= 125 °C

T

C

= - 55 °C

0

400

800

1200

1600

2000

0 12 24 36 48 60

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.5

0.8

1.1

1.4

1.7

2.0

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

I

D

= 20 A

V

GS

= 10 V

V

GS

= 4.5 V

SIR664DP-T1-GE3

SIR664DP-T1-GE3

Products related to this Datasheet