MMT08B064T3G

© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 1
1 Publication Order Number:
MMT08B064T3/D
MMT08B064T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective Devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
High Surge Current Capability: 80 Amps 10 x 1000 msec, for
Controlled Temperature Environments
The MMT08B064T3 is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Recognized − File #E210057
Pb−Free Package is Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Off−State Voltage − Maximum V
DM
58 V
Maximum Pulse Surge Short Circuit Current
Non−Repetitive
Double Exponential Decay Waveform
(−25°C Initial Temperature) (Notes 1 and 2)
2 x 10 msec
8 x 20 msec
10 x 160 msec
10 x 360 msec
10 x 560 msec
10 x 700 msec
10 x 1000 msec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
I
PPS5
I
PPS6
I
PPS7
±250
±250
±150
±150
±100
±100
±80
A(pk)
Nonrepetitive Peak On−State Current 60 Hz
Full Sign Wave
I
TSM
32 A(pk)
Maximum Nonrepetitive Rate of Change of
On−State Current Exponential Waveform, < 100 A
di/dt "150
A/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
80 AMP SURGE, 64 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MMT08B064T3 SMB 2500/Tape & Reel
MT1 MT2
(
)
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMT08B064T3G SMB
(Pb−Free)
2500/Tape & Reel
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
A = Assembly Location
Y = Year
WW = Work Week
RPCC = Device Code
G = Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
AYWW
RPCC G
G
MMT08B064T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Operating Temperature Range Blocking or Conducting State T
J1
40 to +125 °C
Overload Junction Temperature − Maximum Conducting State Only T
J2
+175 °C
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities.
Characteristics Symbol Min Typ Max Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, I
SC
= 1.0 A, Vdc = 1000 V)
(+65°C)
V
(BO)
77
80
V
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 kW, t = 0.5 cycle) (Note 3)
(+65°C)
V
(BO)
77
80
V
Breakover Voltage Temperature Coefficient dV
(BO)
/dT
J
0.054 V/°C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities V
(BR)
58 V
Off State Current (V
D1
= 50 V) Both polarities
Off State Current (V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
mA
On−State Voltage (I
T
= 1.0 A)
(PW 300 ms, Duty Cycle 2%) (Note 3)
V
T
3.0 V
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 kW)
Both polarities
I
BO
91 mA
Holding Current (Both polarities) (Note 3)
V
S
= 500 V; I
T
(Initiating Current) = "1.0 A (+65°C)
I
H
150
130
mA
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
dv/dt 2000
V/ms
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
C
O
67
130
pF
3. Measured under pulse conditions to reduce heating.
Voltage Current Characteristic of TSPD
(Bidirectional Device)
Symbol Parameter
I
D1
, I
D2
Off State Leakage Current
V
D1
, V
D2
Off State Blocking Voltage
V
BR
Breakdown Voltage
V
BO
Breakover Voltage
I
BO
Breakover Current
I
H
Holding Current
V
TM
On State Voltage
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
MMT08B064T3
http://onsemi.com
3
V
BR
, BREAKDOWN VOLTAGE (V)
I
D1
, OFF−STATE CURRENT (
m
A)
Figure 1. Typical Off−State Current versus
Temperature
TEMPERATURE (°C)
14012010080600−40−60
10
1
0.1
0.01
0.001
Figure 2. Typical Breakdown Voltage versus
Temperature
TEMPERATURE (°C)
V
D1
= 50 V
0−60 140
78
76
74
72
70
68
66
80
−40 20
−20 20 40
−20 40 12010060 80
CURRENT (A)
I
PP
− PEAK PULSE CURRENT − %I
PP
I
H
, HOLDING CURRENT (mA)
V
BO
, BREAKOVER VOLTAGE (V)
Figure 3. Maximum Breakover Voltage versus
Temperature
Figure 4. Typical Holding Current versus
Temperature
TEMPERATURE (°C)
700
−40
100
TEMPERATURE (°C)
40060 140
84
82
80
78
76
74
86
TIME (s)
10000
0
100010010
250
150
50
Figure 5. Exponential Decay Pulse Waveform Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
−40
20
20 60 12010080
600
500
400
300
200
20 0 20 40 60 80 100 120
TIME (ms)
0
50
0
100
t
r
= rise time to peak value
t
f
= decay time to half value
t
r
t
f
Peak
Value
Half Value
70
90
110
130
210
230
170
190

MMT08B064T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Thyristor Surge Protection Devices (TSPD) 80A Surge 64V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet