© 2011 IXYS All rights reserved
1 - 6
20110321a
VWM 270-0075X2
V
DSS
= 75 V
I
D25
= 270 A
R
DS(on)
= 2.1 mΩ
Three phase full bridge
with Trench MOSFETs
MOSFET T1 - T6
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C 75 V
V
GS
±
20 V
I
D25
I
D80
T
C
= 25°C
T
C
= 80°C
270
215
A
A
I
F25
I
F80
T
C
= 25°C (diode)
T
C
= 80°C (diode)
280
180
A
A
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low R
DSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
with optimized heat transfer
L1
L2
L3
L+
G1
S1
G2
S2
L-
G3
S3
G4
S4
G5
S5
G6
S6
T1
T2
T3
T4
T5
T6
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
R
DSon
1)
V
GS
= 10 V; I
D
= 100 A; on chip level 2.1 mW
V
GS(th)
V
DS
= 20 V; I
D
= 0.5 mA 2 4 V
I
DSS
V
DS
= 75 V;
V
GS
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
10
300
µA
µA
I
GSS
V
GS
=
±
20 V; V
DS
= 0 V 0.4 µA
Q
g
Q
gs
Q
gd
V
GS
= 10 V; V
DS
= ½V
DSS
; I
D
= 230 A
360
105
80
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
rec
inductive load
V
GS
= 10 V; V
DS
= 37 V
I
D
= 230 A; R
G
= 10 Ω T
VJ
= 25°C
R
G
= R
G ext
+ R
out driver
140
225
380
265
0.23
3.49
0.04
ns
ns
ns
ns
mJ
mJ
mJ
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
rec
inductive load
V
GS
= 10 V; V
DS
= 37 V
I
D
= 230 A; R
G
= 10 Ω T
VJ
= 125°C
R
G
= R
G ext
+ R
out driver
145
240
410
230
0.3
2.95
0.06
ns
ns
ns
ns
mJ
mJ
mJ
R
thJC
R
thJH
with heat transfer paste (IXYS test setup) 0.66
0.44 K/W
K/W
1)
V
DS
= I
D
·(R
DS(on)
+ 2R
Pin to Chip
)
