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IRFB4228PBF

P1-P3P4-P6P7-P8
IRFB4228PbF
4 www.irf.com
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Safe Operating Area
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 7. Typical E
PULSE
vs.Temperature
20 40 60 80 100 120 140 160
Temperature (°C)
0
20
40
60
80
100
120
140
E
n
e
r
g
y
p
e
r
P
u
l
s
e
(
µ
J
)
L = 220nH
C = 0.3µF
C = 0.2µF
C = 0.1µF
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
25 50 75 100 125 150 175
T
J
, Junction Temperature (°C)
0
10
20
30
40
50
60
70
80
90
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
0 1020304050607080
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
I
D
= 50A
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
IRFB4228PbF
www.irf.com 5
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Threshold Voltage vs. Temperature
Fig 14. Maximum Avalanche Energy vs. Temperature
Fig 13. On-Resistance vs. Gate Voltage
Fig 16. Typical Repetitive peak Current vs.
Case temperature
4 6 8 10 12 14 16 18
V
GS,
Gate -to -Source Voltage (V)
0
10
20
30
40
50
60
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 50A
T
J
= 125°C
T
J
= 25°C
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 13A
20A
BOTTOM 50A
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
G
S
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
25 50 75 100 125 150 175
Case Temperature (°C)
0
50
100
150
200
250
R
e
p
e
t
i
t
i
v
e
P
e
a
k
C
u
r
r
e
n
t
(
A
)
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0852 0.000052
0.1882 0.000980
0.1769 0.008365
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci i/Ri
Ci= τi/Ri
IRFB4228PbF
6 www.irf.com
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
*** V
GS
= 5V for Logic Level Devices
***
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
**
*
*
Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
P1-P3P4-P6P7-P8

IRFB4228PBF

Mfr. #:
Buy IRFB4228PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 150V 83A 15mOhm 72nC
Lifecycle:
New from this manufacturer.
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