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DSS4540X-13

P1-P3P4-P4
DSS4540X
Document number: DS31592 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DSS4540X
NEW PRODUCT
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
• Complementary PNP Type Available (DSS5540X)
• Ultra Low Collector-Emitter Saturation Voltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6 V
Continuous Collector Current
I
C
4 A
Repetitive Collector Current (Note 3)
I
CRM
5 A
Peak Pulse Collector Current
I
CM
10 A
Continuous Base Current
I
B
1 A
Peak Pulse Base Current
I
BM
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ T
A
= 25°C P
D
0.9 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
R
θ
JA
139 °C/W
Power Dissipation (Note 5) @ T
A
= 25°C P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 5) @ T
A
= 25°C
R
θ
JA
62.5 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Operated under pulsed conditions: pulse width ≤ 10ms; duty cycle ≤ 0.2.
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
Top View
Device Schematic Pin Out Configuration
4
3
2
1
C
C
B
E
3
1
2,4
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
BA
SE
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DSS4540X
Document number: DS31592 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DSS4540X
NEW PRODUCT
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
40
⎯ ⎯
V
I
C
= 100μA
Collector-Emitter Breakdown Voltage (Note 6)
V
(
BR
)
CEO
40
⎯ ⎯
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
6
⎯ ⎯
V
I
E
= 100μA
Collector-Base Cutoff Current
I
CBO
⎯ ⎯
100 nA
V
CB
= 30V, I
E
= 0
⎯ ⎯
50
μA
V
CB
= 30V, I
E
= 0, T
A
= 150°C
Collector-Emitter Cut-Off Current
I
CES
⎯ ⎯
100 nA
V
CE
= 30V, V
BE
= 0V
Emitter-Base Cutoff Current
I
EBO
⎯ ⎯
100 nA
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
300
⎯ ⎯
⎯
V
CE
= 2V, I
C
= 0.5A
300
⎯ ⎯ V
CE
= 2V, I
C
= 1A
250
⎯ ⎯ V
CE
= 2V, I
C
= 2A
100
⎯ ⎯
V
CE
= 2V, I
C
= 5A
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯
90
mV
I
C
= 0.5A, I
B
= 5mA
⎯ ⎯
120
I
C
= 1A, I
B
= 10mA
⎯
80 150
I
C
= 2A, I
B
= 200mA
⎯
160 290
I
C
= 4A, I
B
= 200mA
⎯
185 355
I
C
= 5A, I
B
= 500mA
Equivalent On-Resistance
R
CE
(
SAT
)
⎯
37 71
mΩ
I
C
= 5A, I
B
= 500mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯ ⎯
1.1
V
I
C
= 4A, I
B
= 200mA
⎯ ⎯
1.2
I
C
= 5A, I
B
= 500mA
Base-Emitter Turn-on Voltage
V
BE
(
ON
)
⎯ ⎯
1.1 V
V
CE
= 2V, I
C
= 2A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
70
⎯ ⎯
MHz
V
CE
= 10V, I
C
= 0.1A,
f = 100MHz
Collector Capacitance
C
c
⎯ ⎯
75 pF
V
CB
= 10V, I
E
= 0A,
f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Time
t
on
⎯
135
⎯
ns
V
CC
= 10V, I
C
= 2A,
I
B1
=
40mA
Delay Time
t
d
⎯
60
⎯
ns
Rise Time
t
r
⎯
75
⎯
ns
Turn-Off Time
t
off
⎯
670
⎯
ns
V
CC
= 10V, I
C
= 2A,
I
B1
= I
B2
= 40mA
Storage Time
t
s
⎯
570
⎯
ns
Fall Time
t
f
⎯
100
⎯
ns
Notes: 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
P , POWER DISSIPATION (W)
D
T , AMBIENT TEMPERATURE ( C)
A
°
Note 4
Fig. 1 Power Dissipation vs. Ambient Temperature
0.4
0.8
1.2
1.6
2.0
25 50 75 100 125 150
Note 5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
01 2345
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
DSS4540X
Document number: DS31592 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DSS4540X
NEW PRODUCT
0
100
200
300
400
500
600
700
800
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.001
0.01
0.1
1
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.
2
V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
0
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
1
10
100
1,000
C
A
P
A
C
I
T
AN
C
E (p
F
)
C
ibo
C
obo
f = 1MHz
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 10V
f = 100MHz
CE
P1-P3P4-P4

DSS4540X-13

Mfr. #:
Buy DSS4540X-13
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
Lifecycle:
New from this manufacturer.
Delivery:
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