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BDX33C

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 14
1 Publication Order Number:
BDX33B/D
BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
Features
• High DC Current Gain − h
FE
= 2500 (typ.) at I
C
= 4.0
• Collector−Emitter Sustaining Voltage at 100 mAdc
V
CEO(sus)
= 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
• Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 2.5 Vdc (max) at I
C
= 3.0 Adc
− BDX33B, 33C/34B, 34C
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
V
CEO
80
100
Vdc
Collector−Base Voltage
BDX33B, BDX34B
BDX33C, BDX34C
V
CB
80
100
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current
Continuous
Peak
I
C
10
15
Adc
Base Current I
B
0.25 Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
70
0.56
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.78 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
TO−220
CASE 221A
STYLE 1
1
www.onsemi.com
MARKING DIAGRAM
BDX3xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
2
3
BDX3xyG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
www.onsemi.com
2
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 100 mAdc, I
B
= 0) BDX33B/BDX34B
BDX33C/BDX34C
V
CEO(sus)
80
100
−
−
Vdc
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 100 mAdc, I
B
= 0, R
BE
= 100) BDX33B/BDX34B
BDX33C/BDX33C
V
CER(sus)
80
100
−
−
Vdc
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 100 mAdc, I
B
= 0, V
BE
= 1.5 Vdc) BDX33B/BDX34B
BDX33C/BDX34C
V
CEX(sus)
80
100
−
−
Vdc
Collector Cutoff Current
(V
CE
= 1/2 rated V
CEO
, I
B
= 0) T
C
= 25°C
T
C
= 100°C
I
CEO
−
−
0.5
10
mAdc
Collector Cutoff Current
(V
CB
= rated V
CBO
, I
E
= 0) T
C
= 25°C
T
C
= 100°C
I
CBO
−
−
1.0
5.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 10 mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc) BDX33B, 33C/34B, 34C
h
FE
750 − −
Collector−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 6.0 mAdc) BDX33B, 33C/34B, 34C
V
CE(sat)
− 2.5 Vdc
Base−Emitter On Voltage
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc) BDX33B, 33C/34B, 34C
V
BE(on)
− 2.5 Vdc
Diode Forward Voltage
(I
C
= 8.0 Adc)
V
F
− 4.0 Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.
BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
www.onsemi.com
3
Figure 1. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03 0.3 3.0 30 300
20
1.0
10
5.0
2.0
1.0
0.5
0.02
3.0 5.0 7.0 10 20 30 50 10
0
70
0.2
dc
5.0 ms
1.0 ms
BDX33B
BDX33C
500 ms
100
ms
T
C
= 25°C
CURVES APPLY BELOW RATED V
CEO
0.05
0.1
2.0
20
1.0
Figure 2. Active−Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.5
0.02
3.0 5.0 7.0 10 20 30 50 10070
0.2
I
C
, COLLECTOR CURRENT (AMP)
dc
5.0 ms
1.0 ms
BDX34B
BDX34C
500 ms
100
ms
T
C
= 25°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
0.05
0.1
2.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMP)
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits
of the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 3 is based on T
J(pk)
= 150°C; T
C
is variable depending on conditions. Second
breakdown pulse limits are valid for duty cycles to 10%
provided T
J(pk)
= 150°C. T
J(pk)
may be calculated from the
data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
10,000
1.0
Figure 3. Small−Signal Current Gain
f, FREQUENCY (kHz)
10
2.0 5.0 10 20 50 100 200 1000
500
300
100
5000
h
FE
, SMALL-SIGNAL CURRENT GAIN
20
3000
200
500
2000
1000
30
50
300
0.1
Figure 4. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
30
1.0 2.0 5.0 20 10010
C, CAPACITANCE (pF)
200
100
70
50
T
J
= 25°C
C
ib
C
ob
500.2 0.5
T
J
= 25°C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
PNP
NPN
PNP
NPN
P1-P3P4-P6

BDX33C

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Manufacturer:
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Description:
Darlington Transistors Silicon Pwr Trnsistr
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