FDZ206P Rev. E (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter Test Conditions Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 µA
–20
V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 µA, Referenced to 25°C
–13
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –16 V, V
GS
= 0 V –1
µA
I
GSSF
Gate–Body Forward Leakage V
GS
= –12 V, V
DS
= 0 V –100
nA
I
GSSR
Gate–Body Reverse Leakage V
GS
= 12 V, V
DS
= 0 V 100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 µA
–0.6
–0.9
–1.5
V
∆V
GS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to 25°C
3.3
mV/°C
r
DS(on)
Static Drain–Source
On–Resistance
V
GS
= – 4.5 V, I
D
= –13 A
V
GS
= –2.5 V, I
D
= –10.5 A
V
GS
= –4.5 V, I
D
= –13 A, T
J
=125°C
7
10
9
9.5
14.5
13
mΩ
I
D(on)
On–State Drain Current V
GS
= –4.5 V, V
DS
= –5 V –60
A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –13 A 58 S
Dynamic Characteristics
C
iss
Input Capacitance 4280
pF
C
oss
Output Capacitance 873
pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
400
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 17 31 ns
t
r
Turn–On Rise Time 11 20 ns
t
d(off)
Turn–Off Delay Time 115
184
ns
t
f
Turn–Off Fall Time
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6 Ω
60 96 ns
Q
g
Total Gate Charge 38 53 nC
Q
gs
Gate–Source Charge 7 nC
Q
gd
Gate–Drain Charge
V
DS
= –10 V, I
D
= –13 A,
V
GS
= –4.5 V
10 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –1.8
A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.8 A
(Note 2)
–0.7
–1.2
V
t
rr
Diode Reverse Recovery Time 34 nS
Q
rr
Diode Reverse Recovery Charge
I
F
= –13A,
d
iF
/d
t
= 100 A/µs
38 nC
Notes:
1. R
θJA
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the
circuit board side of the solder ball, R
θJB
, is defined for reference. For R
θJC
, the thermal reference point for the case is defined as the top surface of the copper
chip carrier. R
θJC
and R
θJB
are guaranteed by design while R
θJA
is determined by the user's board design.
a) 56°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 119°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ206P P-Channel 2.5V Specified PowerTrench
BGA MOSFET
