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BYW4200B-TR

P1-P3P4-P6
SMBYW04-200
BYW4200B
®
October 1999 - Ed: 4C
HIGH EFFICIENCY FAST RECOVERY DIODE
I
F(AV)
4 A
V
RRM
200 V
V
F
(max) 0.85 V
Tj (max) 150 °C
MAIN PRODUCT CHARACTERISTICS
SUITED TO SMPS AND DRIVES
SURFACE MOUNT PACKAGE
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
FEATURES AND BENEFITS
Single chip rectifier suited to Switch Mode Power
Supplies and high frequency converters.
Packaged in DPAK and SMC, this surface mount
device is intended for use in low voltage, high
frequency inverters, free wheeling and rectification
applications.
DESCRIPTION
DPAK
BYW4200B
4
1(nc)
2
3
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
RMS forward current 10 A
I
F(AV)
Average forward current
δ
= 0.5
DPAK
SMC
Tcase = 130°C
Tlead = 70°C
4A
I
FSM
Surge non repetitive forward current tp = 10 ms
sinusoidal
70 A
Tstg Storage temperature range - 65 to + 150
°
C
Tj Maximum operating junction temperature 150 °C
ABSOLUTE RATINGS
(limiting values)
2
4(TAB)
3
SMC
(JEDEC DO-214AB)
SMBYW04-200
1/6
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Symbol Parameter Package Value Unit
R
th (j-c)
Junction to case DPAK 5
°
C/W
R
th (j-l)
Junction to leads SMC 20
°
C/W
THERMAL RESISTANCE
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
I
R
* Reverse leakage current Tj = 25
°
CV
R
= V
RRM
10
µ
A
Tj = 100
°
C 0.15 0.5 mA
V
F
** Forward voltage drop Tj = 25
°
CI
F
= 12 A 1.25 V
Tj = 100
°
CI
F
= 4 A 0.8 0.85
STATIC ELECTRICAL CHARACTERISTICS
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.7 x I
F(AV)
+ 0.037 I
F
2
(RMS)
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj = 25°C I
F
= 1A
V
F
= 30V
dI
F
/dt = -50 A/
µ
s2635ns
t
fr
Tj = 25°C I
F
= 4A
V
FR
= 1.1 x V
F
max
dI
F
/dt = -50 A/
µ
s20 ns
V
FP
Tj = 25°C I
F
= 4A dI
F
/dt = -50 A/
µ
s5 V
RECOVERY CHARACTERISTICS
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
PF(av)(W)
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
IF(av) (A)
T
δ
=tp/T
tp
Fig. 1:
Average forward power dissipation versus
average forward current.
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
2
4
6
8
10
12
14
16
18
20
IM(A)
P=1.0W
P=1.5W
P=2.0W
P=2.5W
T
δ
=tp/T
tp
δ
Fig. 2:
Peak current versus form factor.
SMBYW04-200 / BYW4200B
2/6
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
1E-3 1E-2 1E-1 1E+0
0.1
0.2
0.5
1.0
Zth(j-c)/Rth(j-c)
T
δ
=tp/T
tp
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
tp(s)
Fig. 6-2:
Variation of thermal impedance junction
to case versus pulse duration (BYW4200B).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1.0
10.0
70.0
IFM(A)
Tj=25°C
Tj=100°C
(Typical values)
Tj=100°C
VFM(V)
Fig. 4:
Forward voltage drop versus forward
current (maximum values).
1E-3 1E-2 1E-1 1E+0
0
5
10
15
20
25
30
35
40
45
50
IM(A)
Tc=125°C
Tc=75°C
I
M
t
δ
=0.5
t(s)
Fig. 5-2:
Non repetitive surge peak forward current
versus overload duration (BYW4200B).
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
T
δ
=tp/T
tp
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
tp(s)
Fig. 6-1:
Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35
µ
m) (SMBYW04-200).
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IF(av)(A)
Rth(j-a)=75°C/W
Rth(j-a)=Rth(j-l)
DPAK
Rth(j-a)=Rth(j-c)
SMC
Tamb(°C)
T
δ
=tp/T
tp
Fig. 3:
Average forward current versus ambient
temperature (
δ
=0.5).
1E-3 1E-2 1E-1 1E+0
2
4
6
8
10
12
IM(A)
Ta=25°C
Ta=50°C
I
M
t
δ
=0.5
t(s)
Fig. 5-1:
Non repetitive surge peak forward current
versus overload duration (SMBYW04-200).
SMBYW04-200 / BYW4200B
3/6
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6

BYW4200B-TR

Mfr. #:
Buy BYW4200B-TR
Manufacturer:
STMicroelectronics
Description:
Rectifiers 4.0 Amp 200 Volt
Lifecycle:
New from this manufacturer.
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