IXFB44N100P Datasheet IXFB44N100P | P1-P3

DS99867A(04/08)

V

DSS

= 1000V

I

D25

= 44A

R

DS(on)

≤≤

≤ 220m

ΩΩ

Ω

t

rr

≤≤

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1000 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 1000 V

V

GSS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C44A

I

DM

T

C

= 25°C, pulse width limited by T

JM

110 A

I

AR

T

C

= 25°C22A

E

AS

T

C

= 25°C2J

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

,T

J

≤ 150°C 15 V/ns

P

D

T

C

= 25°C 1250 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from case for 10s 300 °C

T

SOLD

Plastic body for 10s 260 °C

F

C

Mounting torque 30..120/6.7..27 N/lb.

Weight 10 g

IXFB44N100P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 1000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 3.5 6.5 V

I

GSS

V

GS

= ± 30V, V

DS

= 0V ± 200 nA

I

DSS

V

DS

= V

DSS

50 μA

V

GS

= 0V T

J

= 125°C 3 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25,

Note 1 220 mΩ

Features

z

Fast recovery diode

z

Unclamped Inductive Switching (UIS)

rated

z

Low package inductance

- easy to drive and to protect

Advantages

z

Plus 264

TM

package for clip or spring

mounting

z

Space savings

z

High power density

G = Gate D = Drain

S = Source TAB = Drain

PLUS264

TM

(IXFB)

(TAB)

G

D

S

Applications

z

Switched-mode and resonant-mode

power supplies

z

DC-DC Converters

z

Laser Drivers

z

AC and DC motor controls

z

Robotics and servo controls

Polar

TM

Power MOSFET

HiPerFET

TM

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFB44N100P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 20 35 S

C

iss

19 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 1060 pF

C

rss

41 pF

R

Gi

Gate input resistance 1.70 Ω

t

d(on)

Resistive Switching Times 60 ns

t

r

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

68 ns

t

d(off)

R

G

= 1Ω (External) 90 ns

t

f

56 ns

Q

g(on)

305 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

104 nC

Q

gd

126 nC

R

thJC

0.10 °C/W

R

thCS

0.13 °C/W

Source-Drain Diode Characteristic Values

T

J

= 25°C unless otherwise specified) Min. Typ. Max.

I

S

V

GS

= 0V 44 A

I

SM

Repetitive, pulse width limited by T

JM

176 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

300 ns

Q

RM

2.5 μC

I

RM

17 A

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

I

F

= 22A, -di/dt = 100A/μs

V

R

= 100V

PLUS264

TM

(IXFB) Outline

IXFB44N100P

Fig. 1. Output Characteristics

@ 25ºC

0

5

10

15

20

25

30

35

40

45

01234567891011

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7V

8V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

10

20

30

40

50

60

70

80

90

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

7V

8V

Fig. 3. Output Characteristics

@ 125ºC

0

5

10

15

20

25

30

35

40

45

0 2 4 6 8 1012141618202224

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 22A Value

vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 44A

I

D

= 22A

Fig. 5. R

DS(on)

Normalized to I

D

= 22A Value

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

0 102030405060708090

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

5

10

15

20

25

30

35

40

45

50

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFB44N100P

IXFB44N100P

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