RTL030P02TR

RTL030P02
Transistors
1/4
DC-DC Converter (20V, 3.0A)
RTL030P02
!
!!
!Features
1) Low on-resistance. (80m at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
!Applications
DC-DC converter
!
!!
!External dimensions (Unit : mm)
Each lead has same dimensions
TUMT6
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
Abbreviated symbol : WN
2.0±0.1
0.85MAX
0.2MAX
0.77±0.05
0.17±0.05
2.1±0.1
1.7±0.1 0.20.2
0.65
1.3±0.11pin mark
0.65
+0.1
0.05
0.3
(1)
(5)
(4)(6)
(3)
(2)
0~0.1
!
!!
!Structure
Silicon P-channel
MOS FET
!
!!
!Packaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
RTL030P02
TR
3000
Type
!
!!
!Equivalent circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
1
(6)
(1)
(5)
(2)
(4)
(3)
RTL030P02
Transistors
2/4
!
!!
!Absolute maximum ratings (Ta=25°C)
1
2
1
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
WP
D
°CTch
°CTstg
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Source current
(Body diode)
20
150
55 to +150
±12
±3
±12
0.8
12
1
!
!!
!Electrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Body diode characteristics (source-drain characteristics)
VSD −−1.2 V I
S
= 0.8A, V
GS
=0VForward voltage
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Pulsed
−±10 µAV
GS
=±12V, V
DS
=0V
V
DD
15V
20 −−VI
D
= 1mA, V
GS
=0V
−−1 µAV
DS
= 20V, V
GS
=0V
0.7 −−2.0 V V
DS
= 10V, I
D
= 1mA
50 70 I
D
= 3.0A, V
GS
= 4.5V
55 77 m
m
m
I
D
= 3.0A, V
GS
= 4V
90 125 I
D
= 1.5A, V
GS
= 2.5V
2.0 −−SV
DS
= 10V, I
D
= 1.5A
760 pF V
DS
= 10V
125
100
pF V
GS
=0V
12
pF f=1MHz
25
ns
50
ns
22
ns
8.0
ns
1.5
nC
2.5
nC V
GS
= 4.5V
R
L
5
R
GS
=10
−−nC I
D
= 3A
VDD 15V
I
D
= 1.5A
V
GS
= 4.5V
R
L
=10
R
GS
=10
RTL030P02
Transistors
3/4
!
!!
!Electrical characteristic curves
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE : V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
Fig.1
Typical Transfer Characteristics
V
DS
= −10V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10
DRAIN CURRENT : I
D
(A)
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
Ta=25°C
Pulsed
V
GS
= −4.5V
V
GS
= −4.0V
V
GS
= −2.5V
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
0.1 1 10
10
100
1000
V
GS
=
4.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10
10
100
1000
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=
4V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10
10
100
1000
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=
2.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
REVERSE DRAIN CURRENT : I
S
(A)
V
GS
=0V
Pulsed
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
10000
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CAPACITANCE : C
(pF)
Ta=25°C
f=1MHz
V
GS
=0V
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Fig.8 Switching Characteristics
td (off)
td (on)
tr
tf
Ta=25°C
V
DD
= −15V
V
GS
= −4.5A
R
G
=10
Pulsed
Ta=25°C
V
DD
= −15V
I
D
= −3A
R
G
=10
Pulsed
012345678
TOTAL GATE CHARGE : Qg
(nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.9
Dynamic Input Characteristics

RTL030P02TR

Mfr. #:
Manufacturer:
Description:
MOSFET P-CH 20V 3A
Lifecycle:
New from this manufacturer.
Delivery:
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