©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJC1386 Rev. C1
FJC1386 PNP Epitaxial Silicon Transistor
July 2005
FJC1386
PNP Epitaxial Silicon Transistor
Low Saturation Transistor Medium Power Amplifier
• Complement to FJC2098
• High Collector Current
• Low Collector-Emitter Saturation Voltage
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -30 V
V
CEO
Collector-Emitter Voltage -20 V
V
EBO
Emitter-Base Voltage -6 V
I
C
Collector Current (DC) -5 A
P
C
Power Dissipation (T
a
= 25°C) 0.5 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 to +150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -50µA, I
E
= 0 -30 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
= 0 -20 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -50µA, I
C
= 0 -6 V
I
CBO
Collector-Cutoff Current V
CB
= -20V, V
B
= 0 -0.5 µA
I
EBO
Emitter-Cutoff Current V
EB
= -5V, I
C
= 0 -0.5 µA
h
FE
DC Current Gain V
CE
= -2V, I
C
=-0.5A 80 390
V
CE (sat)
Collector-Emitter Saturation Voltage I
C
= -4A, I
B
= -0.1A -1.0 V
V
BE (sat)
Base-Emitter Saturation Voltage I
C
= -4A, I
B
= -0.1A -1.5 V
SOT-89
1
1. Base 2. Collector 3. Emitter
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PY WW
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FE
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Year co d e
Weekly code
Marking
