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VEMD5110X01

P1-P3P4-P6P7-P7
VEMD5110X01
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 21-Mar-16
1
Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD5110X01 is a high speed and high sensitive PIN
photodiode. It is a low profile surface mount device (SMD)
including the chip with a 7.5 mm
2
sensitive area and a
daylight blocking filter matched with IR emitters operating at
wavelength 870 nm or 950 nm.
FEATURES
• Package type: surface mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4 x 0.9
• Radiant sensitive area (in mm
2
): 7.5
• AEC-Q101 qualified
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm
to 950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data
transmissionsystems, e.g. road cash systems
• Photodiode for smoke detectors
• Photodiode for rain sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.5
(nm)
VEMD5110X01 48 ± 65 790 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD5110X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view
VEMD5110X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
20 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
110 °C
Operating temperature range T
amb
-40 to +110 °C
Storage temperature range T
stg
-40 to +110 °C
Soldering temperature Acc. reflow sloder profile fig. 8 T
sd
260 °C
Thermal resistance junction/ambient R
thJA
350 K/W
ESD safety HBM ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESD
HBM
≥ 2 kV
VEMD5110X01
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 21-Mar-16
2
Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
11.3V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
20 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
230nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
70 pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
25 40 pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
-2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
45 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
0.1 %/K
Reverse light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 5 V
I
ra
40 48 μA
Angle of half sensitivity ϕ ± 65 deg
Wavelength of peak sensitivity λ
p
940 nm
Range of spectral bandwidth λ
0.5
790 to 1050 nm
Noise equivalent power V
R
= 10 V, λ = 950 nm NEP 4 x 10
-14
W/√Hz
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
100 ns
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative
Re
verse
Light Current
T - Ambient Temperature (°C)
amb
ra rel
VEMD5110X01
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 21-Mar-16
3
Document Number: 84204
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm
2
)
10
12787
V
R
= 5 V
λ = 950 nm
0.1 1 10
1
10
100
V
R
- Reverse Voltage (V)
100
12788
I
ra
- Reverse Light Current (µA)
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
= 950 nm
λ
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1
100
110
94 8426
S(λ)
rel
- Relative Spectral Sensivity
0.0
0.2
0.4
0.6
0.8
1.0
1.2
750 850 950 1050 1150
λ - Wavelength (nm)
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
P1-P3P4-P6P7-P7

VEMD5110X01

Mfr. #:
Buy VEMD5110X01
Manufacturer:
Vishay Semiconductors
Description:
Photodiodes 20V 215mW 65deg 790 to 1050nm
Lifecycle:
New from this manufacturer.
Delivery:
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