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FMU-16S
P1-P3
P4-P4
SANK
EN ELECTR
IC CO., L
TD
.
FMU
-16S
.R
040802
1
/
4
614
26-
01
1
S
co
pe
The prese
nt specif
ications
shall app
ly
to
an FMU
-16S,R.
2
O
utline
T
y
p
e
Silicon Diode
S
tr
uctu
re
Re
sin
Mo
lded
Applicatio
ns
H
igh
Fr
eque
ncy
R
ec
tification
3
F
lammability
UL94V
-0(Equiv
alent)
4
A
bso
lute maximum
ratings
N
o
.
Item
Sy
mbol
U
ni
t
Rati
n
g
Co
nditions
1
T
ran
sie
n
t Peak Re
v
erse
V
o
ltage
V
RSM
V
650
2
Peak R
eve
r
se
V
oltage
V
RM
V
600
3
A
v
er
age Fo
rward Curre
nt
I
F(A
V
)
A
5.0
Refe
r
to
de
r
ati
n
g
cu
rve
in Sectio
n 7
4
Peak Sur
ge Fo
r
ward C
urrent
I
FSM
A
30
10ms.
H
alf sine wav
e, one s
h
o
t
5
I
2
t Lim
iting V
alue
I
2
t
A
2
s
4.5
1
ms
≤
t
≤
10
ms
6
Junctio
n T
e
mpe
r
atu
r
e
T
j
°C
-40 to +150
7
S
torage T
e
mpe
rature
T
stg
°C
-40 to +150
No
.1,
2,
4 a
nd 5show
r
atings pe
r one c
h
ip.
5
Ele
ctrical c
h
aracteristic
s (T
a
=25°C
,
unle
ss othe
rwise spe
cif
ied)
N
o
.
Item
Sy
mbol
U
ni
t
V
alue
Conditio
n
s
1
Fo
rward V
oltage D
r
op
V
F
V
1.5 max.
I
F
=2.5A
2
Reve
rse Leakage Cu
rrent
I
R
µA
50 max.
V
R
=V
RM
3
Reve
rse
Le
akage
Cu
rr
e
n
t Unde
r
H
igh
T
e
mperature
H
・
I
R
µA
500 max.
V
R
=V
RM
,
T
j
=150
°C
4
Reve
rse Re
covery
T
ime
t
rr
1
ns
400 max.
I
F
=I
RP
=100mA
90
%
R
e
c
o
v
ery
po
in
t,
T
j
=2
5
°C
t
rr
2
ns
180 max.
I
F
=100mA
,
I
RP
=200
m
A
75
%
R
e
c
o
v
ery
po
in
t,
T
j
=2
5
°C
5
Thermal Re
sistance
R
th(j-
c)
°C
/W
4.0 max.
Be
t
ween Junctio
n
and case
No
.1,
2,
3 a
nd 4 show
characteristics
pe
r one c
h
ip.
SANK
EN ELECTR
IC CO., L
TD
.
FMU
-16S
.R
040802
2
/
4
614
26-
01
6
C
h
aracteristics
I
F(A
V
)
-
P
F
Forward Pow
er Dissip
ation, P
F
(W)
A
v
er
age Fo
rward Curre
nt, I
F(A
V
)
(A)
V
R
-
P
R
Reverse Pow
er Diss
ipation
, P
R
(W)
Reve
rse V
o
lta
ge,
V
R
(V)
0
.0
0
.1
0
.2
0
.3
0
.4
0
.5
0
100
200
300
400
500
600
0
2
4
6
8
10
0
1
2
3
4
5
t/T=1/6
t/T=1/3
,sinew
ave
t/T=1/2
DC
1-t/T=5
/6
sinewav
e
1-t/T=2
/3
1-t/T=1
/2
Tj=150
°C
t
T
Tj=150
°C
t
T
SANK
EN ELECTR
IC CO., L
TD
.
FMU
-16S
.R
040802
3
/
4
614
26-
01
7
D
erating
T
c
-
I
F(A
V
)
V
R
=600(V)
A
verag
e Forward
Curren
t, I
F(A
V)
(A)
Case
T
empe
r
ature,
T
C
(°C)
0
1
2
3
4
5
50
100
150
t/T=1/6
DC
t/T=1/3
t/T=1/2
Tj=150
°C
t
T
P1-P3
P4-P4
FMU-16S
Mfr. #:
Buy FMU-16S
Manufacturer:
Description:
DIODE ARRAY GP 600V 5A TO220F
Lifecycle:
New from this manufacturer.
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EMS
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