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VS-30ETH06STRR-M3

P1-P3P4-P6P7-P9P10-P12P13-P13
VS-30ETH06S-M3, VS-30ETH06-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
1
Document Number: 96236
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 125 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
R
600 V
V
F
at I
F
1.34 V
t
rr
typ. 28 ns
T
J
max. 175 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Single
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
Anode
1
3
Base
cathode
2
N/C Anode
1
3
2
N/C
VS-30ETH06S-M3
VS-30ETH06-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 103 °C 30
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 200
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 30 A - 2.0 2.6
I
F
= 30 A, T
J
= 150 °C - 1.34 1.75
Reverse leakage current I
R
V
R
= V
R
rated - 0.3 50
μA
T
J
= 150 °C, V
R
= V
R
rated - 60 500
Junction capacitance C
T
V
R
= 600 V - 33 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-30ETH06S-M3, VS-30ETH06-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
2
Document Number: 96236
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 28 35
nsT
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-31-
T
J
= 125 °C - 77 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.5 -
A
T
J
= 125 °C - 7.7 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 65 -
nC
T
J
= 125 °C - 345 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-0.71.1
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth, and greased - 0.2 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK (TO-263AB) 30ETH06S
Case style TO-262AA 30ETH06-1
1
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
1000
0 3.51.5
1
2.5
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.5 2 3
0.01
0.1
1
10
100
0 200 400
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
300
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
0.001
1000
600500
0.0001
VS-30ETH06S-M3, VS-30ETH06-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
3
Document Number: 96236
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100
1000
0 200 400 500 600
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
300100
T
J
= 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
0.001
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0 5 10 15 20 25
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
140
160
180
See note (1)
120
DC
100
80
30 35 40 45
Square wave (D = 0.50)
Rated V
R
applied
0 1020304045
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
10
30
40
50
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
20
RMS limit
5 152535
60
70
80
90
0
P1-P3P4-P6P7-P9P10-P12P13-P13

VS-30ETH06STRR-M3

Mfr. #:
Buy VS-30ETH06STRR-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600V 30A IF TO-220AC 200A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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