IDT5V41236
4 OUTPUT PCIE GEN1/2/3 SYNTHESIZER
IDT®
4 OUTPUT PCIE GEN1/2/3 SYNTHESIZER 9
IDT5V41236 APRIL 4, 2017
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the IDT5V41236. These ratings are stress ratings
only. Functional operation of the device at these or any other conditions above those indicated in the operational sections of
the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods can affect product
reliability. Electrical parameters are guaranteed only over the recommended operating temperature range.
DC Electrical Characteristics
Unless stated otherwise, VDD = 3.3V ±5%, Ambient Temperature -40 to +85C
1. Single edge is monotonic when transitioning through region.
2. Inputs with pull-ups/-downs are not included.
Item Rating
Supply Voltage, VDD, VDDA 5.5V
All Inputs and Outputs -0.5V to VDD+0.5V
Ambient Operating Temperature (commercial) 0 to +70C
Ambient Operating Temperature (industrial) -40 to +85C
Storage Temperature -65 to +150C
Junction Temperature 125C
Soldering Temperature 260C
ESD Protection (Input) 2000V min. (HBM)
Parameter Symbol Conditions Min. Typ. Max. Units
Supply Voltage V 3.135 3.3 3.465
Input High Voltage
1
V
IH
S0, S1, S2, OE, X1, PD# 2.2 VDD +0.3 V
Input Low Voltage
1
V
IL
S0, S1, S2, OE, X1, PD# VSS-0.3 0.8 V
Input Leakage Current
2
I
IL
0 < Vin < VDD -5 5 A
Operating Supply Current
@100 MHz
I
DD
R
S
=33R
P
=50, C
L
=2 pF 113 125 mA
I
DDOE
OE =Low 42 50 mA
Input Capacitance C
IN
Input pin capacitance 7 pF
Output Capacitance C
OUT
Output pin capacitance 6 pF
X1, X2 Capacitance C
INX
5pF
Pin Inductance L
PIN
5nH
Output Impedance Zo CLK outputs 3.0 k
Pull-up Resistance R
PUP
S0, S1, OE, S2, PD# 100 k
